ALD110908APAL Allicdata Electronics
Allicdata Part #:

1014-1038-ND

Manufacturer Part#:

ALD110908APAL

Price: $ 2.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Advanced Linear Devices Inc.
Short Description: MOSFET 2N-CH 10.6V 8DIP
More Detail: Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V...
DataSheet: ALD110908APAL datasheetALD110908APAL Datasheet/PDF
Quantity: 1000
50 +: $ 2.21697
Stock 1000Can Ship Immediately
$ 2.44
Specifications
Series: EPAD®
Packaging: Tube 
Part Status: Active
FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
Vgs(th) (Max) @ Id: 810mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
Description

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The ALD110908APAL is a MEMS-MOSFET array made for a broad range of applications. This device consists of sixteen independent field-effect transistors integrated into a single package. While it is optimized for power, it is suitable for a wide range of applications from low-noise amplifiers to low-power audio preamps. Each transistor has four electrodes and an integrated gate resistor to increase its efficiency.

The main advantage of the ALD110908APAL is its ability to operate in multiple configurations. The transistors can be arranged as a single-input, single-output (SISO), multiple-input, single-output (MISO), or multiple-input, multiple-output (MIMO). This makes it ideal for applications such as audio amplifiers that require a wide range of gain control settings.

Another benefit of the device is its reduced power consumption. The integrated gate resistor helps to scale down the current drawn by the transistors, allowing them to operate at a lower voltage than traditional field-effect transistors. As such, it can improve the efficiency of the circuit while reducing noise levels.

With regard to its working principle, the ALD110908APAL comprises four different transistors, each of which has a different operating range. When a small gate voltage is applied, the transistor operates in its linear mode. When the gate voltage is increased, it transitions to its saturation mode. The transition from linear to saturated modes is smooth, allowing for precise gain control.

The ALD110908APAL also has a slew rate control feature that can be used to adjust the speed at which the transistors transition from linear to saturated modes. This can be used to reduce noise levels and improve the sound quality of audio amplifiers.

Finally, the ALD110908APAL is also highly durable and has excellent packaging. The device is designed to handle a wide range of temperatures and is rated up to 150°C. Additionally, its smaller package size makes it suitable for applications where space is at a premium.

In summary, the ALD110908APAL is an excellent choice for a wide range of applications. Its MEMS-MOSFET array design allows for a wide range of gain control settings, while its low-power consumption helps to reduce noise levels and save power. Additionally, its smaller package size and high temperature ratings make it suitable for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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