ALD110902SAL

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FETs, or Field-Effect Transistors, are a type of transistor that operates using an electric field created by a voltage applied to one or more terminals. MOSFETs (Metal Oxide Field Effect Transistors) are a type of FET that uses a thin insulating layer of metal oxide to control the current flow, rather than relying on a gate voltage. Arrays of FETs and MOSFETs are available for applications that require more than one FET or MOSFET. This article covers the application field and the working principle of the ALD110902SAL array.

Application Field

The ALD110902SAL is a low-power IC that is suitable for communications, control systems and power converters. The array is specifically designed for use in controlling current and protecting undersized, sensitive loads such as MOSFETs or power MOSFETs. It is suitable for applications that require a low total gate charge and a low on-resistance. The array can also be used in multiple-switch applications, current mirror circuits, active filters, RF switches, power conditioning and H-bridge drive circuits. In addition, it can be used for power saving applications that require active control of power MOSFETs.

Features

The ALD110902SAL array is a high-performance FET array composed of two enhancement-mode power MOSFETs. Each of the FETs is rated for an idling current of 6.25 A at -55°C junction temperature (Tj). The array has an on-resistance of less than 5 mOhm typical at a gate voltage of 10V and a total gate charge of less than 80 nC. The array also features a low saturation voltage of 0.25V. In addition, the array features a low input capacitance of 3.2 pF, which helps improve the switching performance of the array.

Working Principle

The ALD110902SAL is a N-channel enhancement-mode FET array. The two FETs in the array are connected in parallel, which gives it a low on-resistance and higher driving capability. When the FET is turned on, current will flow through it. However, the amount of current flow is limited by the gate drive. The gate drive is the voltage which is applied to the gate of the MOSFET to control the amount of current that flows through it. When the gate voltage is increased, the FET will become more conductive and allow more current to flow. On the other hand, when the gate voltage is decreased, the FET will become less conductive and limit the amount of current that flows through it.

In addition to its low on-resistance and gate drive, the ALD110902SAL array also features protection for undersized, sensitive loads. It does this by limiting the gate voltage to 8V in the green (off) state and by limiting the gate voltage to 10V in the red (on) state. This helps protect the FETs from being damaged by overvoltages.

Conclusion

The ALD110902SAL array is a low-power IC specifically designed for controlling current and protecting undersized, sensitive loads such as MOSFETs or power MOSFETs. It is suitable for applications that require a low total gate charge, a low on-resistance, and a low saturation voltage. It is an enhancement-mode FET array which is driven by a gate voltage, which is used to control the amount of current that flows through it. The array also features protection for undersized, sensitive loads by limiting the gate voltage.

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