Allicdata Part #: | 1014-1050-ND |
Manufacturer Part#: |
ALD111933MAL |
Price: | $ 1.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 2N-CH 10.6V 8MSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V... |
DataSheet: | ALD111933MAL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.43086 |
Series: | EPAD® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 5.9V |
Vgs(th) (Max) @ Id: | 3.35V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | 8-MSOP |
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The ALD111933MAL device is a MOSFET array, consisting of a P-Channel MOSFET and an N-Channel MOSFET. It is widely used in low power digital circuits, such as voltage regulators or battery powered logic circuits, as it simplifies transistor level design. The use of a MOSFET array helps reduce the size of the circuit as well as reducing power consumption.The ALD111933MAL is a logic level n-channel enhancement mode MOSFET array. It is an ideal choice for applications requiring low power consumption, such as a voltage regulator or low power logic circuitry. It has a very low On-Resistance, making it ideal for use in switch mode power applications.The MOSFETs in the ALD111933MAL are designed for operation between a supply voltage of 5.0V and 24.0V at -55°C to +150°C as well as a \'floating\' input, which allows for operation at higher voltages but must be supplied with a suitable ground reference. Its RDS (On) is 0.25mΩ @ 6V and has a relatively low gate-source threshold voltage of 1V. It is available in an 8 pin SOIC package. The ALD111933MAL has a low input capacitance and low output capacitance. This helps improve the power efficiency of the device, by reducing the effects of Miller capacitance, which is the undesirable of parasitic capacitance which can occur between the gate and drain of the MOSFET. This capacitance has a tendency to increase with temperature, leading to increased power dissipation and reduced efficiency in the circuit. The MOSFET helps reduce the power dissipation suffered by the device, particularly at higher temperatures. Its low on-resistance and low output capacitance results in an improved rate of power delivery when compared to similar devices. This helps reduce the power lost to Miller capacitance, increasing the efficiency of the device.The MOSFETs in the ALD111933MAL can be used in both AC and DC applications, and are often used to control the current in a system. In an AC application, the device can be used to switch an AC current directly, whereas in a DC application, it can be used to switch an external DC load. A P-channel MOSFET is an ideal choice when switching larger DC loads, as it can withstand higher current levels and has a greater capacity to dissipate excess heat. In addition, the ALD111933MAL has the advantage of being able to be used with logic level circuits, which helps reduce power consumption in the device and allows greater control over the switching of the circuit.The ALD111933MAL is also a great choice for use in power supply circuits, as its very low On-Resistance helps reduce losses in the power supply circuit. This helps to improve the efficiency of the power supply and therefore reduces overall power consumption. Additionally, the MOSFET has a relatively low gate-source threshold voltage of 1V, which helps reduce the power consumption of logic circuits and provides greater control over the switching of the device.
The specific data is subject to PDF, and the above content is for reference
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