Allicdata Part #: | ALD1108EPCL-ND |
Manufacturer Part#: |
ALD1108EPCL |
Price: | $ 2.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 4N-CH 10V 16DIP |
More Detail: | Mosfet Array 4 N-Channel, Matched Pair 10V 600mW ... |
DataSheet: | ALD1108EPCL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.42890 |
Series: | EPAD® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 5V |
Vgs(th) (Max) @ Id: | 1.01V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 5V |
Power - Max: | 600mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 16-DIP (0.300", 7.62mm) |
Supplier Device Package: | 16-PDIP |
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ALD1108EPCL, a second generation reduced feature size Silicon N-Channel MOSFET Array device, is designed for high density and power applications.
It is based on the proven THX packaged N-channel MOSFET devices which features fast switching performance with reduced on-state resistance, low gate charge and low gate resistance. The device is offered in an advanced 5.6mm x 7mm package size, offering a thermal robust design for improved reliability.
The ALD1108EPCL can be used in a variety of applications, including motor control, integrated systems and inverter designs. It is also suitable for battery operated applications where space is limited but where high performance and reliability are required.
The working principle of ALD1108EPCL is based on its low-gate-threshold voltage, which enables it to operate at low current levels and offers higher levels of performance. Its N-Channel MOSFET array is designed to operate at high frequency, delivering superior performance levels and enhanced reliability. It is capable of operating up to the maximum junction temperature of 150°C and its low gate-oxide thickness provides optimal breakdown voltage.
The ALD1108EPCL provides an excellent combination of excellent thermal characteristics, efficient switching performance and superior on-resistance. Its high speed rated performance and enhanced switching capability allows for an improved cost per watt ratio, making it an optimal choice for a variety of high power applications.
It is designed to offer superior transient performance and improved system reliability in multi-level designs. Its high speed operation and extended temperature operation ensures robust performance in applications such as motor control, buck-boost designs and fault protection circuits. Its high power level and switch-mode performance enable it to operate with improved efficiency.
The ALD1108EPCL is also suitable for high density applications, as it enables up to four paralleled MOSFET array devices in a single package. This feature improves system efficiency by reducing the number of power losses due to the dissipative losses of having multiple devices in parallel.
Overall, ALD1108EPCL is a reliable and efficient solution for a variety of high power applications. Its fast switching performance, high density design and extended temperature operation make it the ideal solution for power applications requiring high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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