Allicdata Part #: | ALD1108ESCL-ND |
Manufacturer Part#: |
ALD1108ESCL |
Price: | $ 2.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 4N-CH 10V 16SOIC |
More Detail: | Mosfet Array 4 N-Channel, Matched Pair 10V 600mW ... |
DataSheet: | ALD1108ESCL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.42890 |
Series: | EPAD® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 5V |
Vgs(th) (Max) @ Id: | 1.01V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 5V |
Power - Max: | 600mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SOIC |
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ALD1108ESCL is an integrated field effect transistor (FET) array suitable for power management and protection applications. This device has been designed to meet the requirements of a wide range of applications and offers superior performance in harsh application conditions. The device is based on a unique 8-FET layout for better thermal dissipation and low on-resistance.
In power management applications, the device can be used for voltage regulation, overcurrent protection and DC/DC conversion. It can also be used for high current switching applications such as motor control and power factor correction. The device is capable of handling up to 8A of peak reverse current and 150V of maximum source voltage. The device also offers low input and output resistance, making it suitable for applications requiring precise control of power dissipation.
The working principle of an ALD1108ESCL FET array is based on the same operating principles as traditional field effect transistors. The device is made up of an array of FETs, each having four terminals. The source and drain terminals of each FET form a diode. When a voltage is applied to the gate terminal, a channel of electrons is created in the underlying material between the source and drain terminals. This channel of electrons creates a low resistance path between the source and drain which allows current to flow between the terminals.
The ALD1108ESCL FET array has been designed to enable fast switching and low on-resistance performance. The device features a low on-resistance of only 4mΩ and a switching frequency of up to 125kHz. It also features a high input voltage protection level (IVLO) of 150V. This feature prevents the gate voltage of the device from being too high, which can cause destructive breakdown of the FET.
The ALD1108ESCL FET array is a cost-effective solution for a variety of power management and protection applications. Its low on-resistance and switching frequency make it an ideal choice for high power applications. Its high input voltage protection level ensures that the device can be used safely in hostile application conditions. The device is also RoHS compliant and can be used in industrial applications.
The specific data is subject to PDF, and the above content is for reference
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