ALD111910SAL

Transistors - FETs, MOSFETs - Arrays

ALD111910SAL is a high voltage silicon N-channel power MOSFET array. It is a high-power and high-density device, which is suitable for applications that require increased power handling capabilities. The device is composed of four independent, high-power N-channel MOSFETs with a maximum drain-source voltage of 600 volts. Each of the internal MOSFETs has multiple gates and sources that can be used to provide multiple outputs.

ALD111910SAL has a wide range of applications. It can be used in industrial, automotive, and consumer applications such as motor drives, radio frequency (RF) amplifiers, lighting, and power conversion. It can also be used in telecom, medical, and computer applications. As a power MOSFET array, it provides a high level of integration and can be used in high-frequency switching applications, in which a large number of switching devices are required.

The working principle of ALD111910SAL is based on the operation of MOSFETs. MOSFETs are also known as metal-oxide-semiconductor (MOS) transistors and are composed of a metal channel and an insulated semiconductor substrate. When a voltage is applied to the gate of the device, it creates an electric field, which modulates the conductivity of the channel by attracting or repelling electrons. This adjusts the current flow into or out of the channel and thus allows the device to act as a switch or an amplifier.

ALD111910SAL is designed to provide a high level of integration and increased power handling capabilities. Its high voltage and wide operating range make it suitable for a variety of applications. Its four independent N-channel MOSFETs are capable of providing multiple outputs and its high power density makes it an attractive choice for power conversion and high-frequency switching applications.

In conclusion, ALD111910SAL is a high voltage silicon N-channel power MOSFET array that provides increased power handling capabilities and a high level of integration. Its wide operating range and high voltage capabilities make it ideal for applications such as motor drives, RF amplifiers, lighting, power conversion, telecom, medical, and computer applications. Its four independent N-channel MOSFETs provide multiple outputs and its high power density make it an attractive choice for high-frequency switching applications.