Allicdata Part #: | 1014-1051-ND |
Manufacturer Part#: |
ALD111933PAL |
Price: | $ 1.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 2N-CH 10.6V 8DIP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V... |
DataSheet: | ALD111933PAL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.77685 |
Series: | EPAD® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Matched Pair |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 5.9V |
Vgs(th) (Max) @ Id: | 3.35V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-PDIP |
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The ALD111933PAL is a flexible and reliable solution that can provide high power performance in a variety of applications. The ALD111933PAL is an array of discrete p-channel MOSFETs (PMOSFETs) that are specifically designed for use in a wide range of switch-mode power supplies (SMPS), DC-DC converters, high voltage motors and automotive applications. This device provides high power performance, high efficiency and dimensional flexibility which makes it ideal for various system designs.
The ALD111933PAL utilizes a substrate composed of TriGate Multi-Level Architecture Board which provides a low-resistance connection between the MOSFET and the output circuit. This architecture assists in eliminating loss due to non-ohmic contacts in the power path. The device also includes an Internal Grid Plate (IGP) which helps to reduce the voltage drop by minimizing the overlap of the breakout field effect. In addition, the IGP reduces noise levels in the power path.
The ALD111933PAL’s construction provides a large number of control and undated gate channels that can be configured to drive appropriate load configurations across the entire current range. This flexibility enables the device to be used in a wide range of applications including high voltage, solar inverters, audio platforms, automotive systems, and high-performance motor control. The device has an outstanding performance rating and is RoHS compliant.
The ALD111933PAL functions on a relatively simple working principle. The gate is in direct contact with the channel of the PMOSFET, which then forms a voltage-controlled region known as the channel. The current that passes through the channel is determined by the external applied voltage. When positive voltage is applied to the gate, the current that passes through the channel increases. When the voltage is reduced, the current decreases. By adjusting the voltage, the MOSFET can be used to control the current that passes through the channel.
The ALD111933PAL is a highly efficient and flexible solution, suitable for a variety of applications. Its unique design significantly reduces noise levels, improves power efficiency and provides a high level of dimensional flexibility that is ideal for use as a high power switch in SMPS and automotive applications. With its excellent performance ratings and RoHS compliant design, the ALD111933PAL is an excellent choice for those who require high power performance in their applications.
The specific data is subject to PDF, and the above content is for reference
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