AO4714 Allicdata Electronics
Allicdata Part #:

785-1052-2-ND

Manufacturer Part#:

AO4714

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 20A 8-SOIC
More Detail: N-Channel 30V 20A (Ta) 3W (Ta) Surface Mount 8-SOI...
DataSheet: AO4714 datasheetAO4714 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 4512pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Series: SRFET™
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AO4714 is a type of an enhancement-mode vertical DMOS field-effect transistor (FET). It is specifically designed for automotive, industrial, and computing applications. The AO4714 is usually used as an audio frequency amplifier, power amplifier, switch, or a voltage regulator. It is a single DMOS FET transistor, which makes it suitable for applications requiring high current drive, low drain-source on-state resistance, and high breakdown voltage. Due to its long service life, higher impedance, and no current leakage during use, the AO4714 is a popular choice for electrical engineers.

An FET transistor is a three-terminal device made up of a thin layer of semiconductor material, called a channel, which lies between two heavily doped regions. This channel is covered by a thin oxide layer formed by the use of a gate oxide. The gate oxide acts as an electrical insulator that separates the channel and the gate electrode. A voltage applied to the gate electrode, called the gate-source voltage (VGS), causes the channel to turn on and off, which modulates the current passing through the channel between the drain and the source. In the case of an enhancement-mode vertical DMOS FET such as the AO4714, the VGS is always positive and when it reaches the threshold voltage, the FET turns on.

Additionally, the threshold voltage of the AO4714 is relatively low, typically between 1.5 V to 2 V. This allows for higher sensitivity and easier control of the circuit as the amount of gate current required is low relative to other FET transistors. Furthermore, the AO4714 features one of the best drain-source on-state resistance characteristics of all single-channel FET transistors, a low 0.13 Ohm maximum on-state resistance at 25°C. This means that it has good current transfer capabilities.

The AO4714 is contained in a HS3DF and HS3P package and has an insulated gate, a source, and a drain and is capable of passing large currents, up to 32A, with excellent thermal performance. It is also capable of withstanding higher drain-source voltages of up to 800 V and gate-source voltages of up to 20 V. It is well suited for both ac and dc loads as well as higher frequency switching applications up to 150KHz. The AO4714 also has excellent heat dissipation characteristics, which makes it easy to use in high-frequency switching applications.

Overall, the AO4714 is a single DMOS FET transistor specifically designed for automotive, industrial and computing applications. It is capable of passing large currents with a very low on-state resistance, and is also capable of operating at very high drain-source voltages. It has excellent thermal performance due to its good heat dissipation characteristics, and also features a relatively low threshold voltage for improved control of the circuit. Due to these features, the AO4714 is an excellent choice for numerous applications.

The specific data is subject to PDF, and the above content is for reference

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