AO4728 Allicdata Electronics
Allicdata Part #:

785-1316-2-ND

Manufacturer Part#:

AO4728

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 20A 8SOIC
More Detail: N-Channel 30V 20A (Tc) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4728 datasheetAO4728 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 4463pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: SRFET™
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AO4728 is a high-performance enhancement mode N-Channel MOSFET (metal-oxide semiconductor field effect transistor). It is manufactured using the latest ultra-low resistance process from Alpha & Omega Semiconductor (AOS). They provide a high-power, high-efficiency solution with excellent switch-ability and low On-resistance for load-switching applications and DC/DC converters. The AO4728 can be used in many applications ranging from power management and automotive, to industrial and consumer electronics.

The AO4728 has a maximum drain-source voltage (VDS) of 20V at a maximum drain current (ID) of 90A. The threshold voltage (VGS) is 1.8V and the maximum drain-source On-resistance (RDSon) is 11.12 mOhms. It is designed to operate in the temperature range of -40°C to 175°C, making it suitable for a variety of automotive and thermal management applications. The package of AO4728 is PSOP-8, a leadless surface mount package, that allows for a compact yet reliable solution.

AO4728 features low input and output capacitances that make it very attractive in high-speed electronic applications such as power MOSFET drivers and high-speed switching circuits. Additionally, its low gate charge (Qg) and low internal gate resistance (Rg) make it suitable for high-efficiency applications such as DC/DC converters and high-performance switching regulators. Furthermore, the very low gate-bias characteristics and on-resistance ratios make it suitable for the wide-range of load requirements in automotive applications.

AO4728 has a typical working principle in which the gate of the MOSFET is biased. This, in turn, defines the electric field in the MOSFET channel and restricts the current flow from source to drain until the voltage across the channel becomes negative. When a voltage is applied to the gate, the MOSFET channels open and allow a current to flow from source to drain. By controlling the applied gate voltage, the on and off states of the MOSFET can be controlled and a wide range of switchable and adjustable signals can be generated.

In conclusion, AO4728 is a versatile high-performance enhancement mode N-Channel MOSFET that can be used in many applications. Special attention had to be paid to its high power, high-efficiency, low On-resistance, low input/output capacitance, low gate charge, and its low gate-bias and RDSon ratio.

The specific data is subject to PDF, and the above content is for reference

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