![AO7407 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 785-1088-2-ND |
Manufacturer Part#: |
AO7407 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 20V 1.2A SC70-3 |
More Detail: | P-Channel 20V 1.2A (Ta) 630mW (Ta) Surface Mount S... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 630mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 135 mOhm @ 1.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AO7407 is a single-gate low-voltage field-effect transistor (FET) produced by AOS. Devices from this series are known for their low power consumption, high performance and efficiency. This family of FETs are commonly used in RF applications, such as in low-noise amplifiers and wideband amplifiers, as well as power management applications.
AO7407 is a breakdown voltage field-effect transistor in which the source is connected to the drain and the current varies by controlling the gate with the source current. It is a one-of-its-kind single FET and can handle voltages up to 30 volts. So it can be used to regulate voltage in voltage-sensitive applications, such as battery chargers, while operating at low temperature, making it perfect for use in energy-saving consumer electronics.
The main advantage of AO7407 is its extremely low threshold voltage, which is as low as 0.5 volts, making it suitable for use in low-voltage applications. This makes it an ideal choice for use in mobile devices and wearables, where the constant input voltage can vary greatly. Moreover, AO7407 features a low on-resistance, low power operation and low drain-source capacitance, making it highly reliable and efficient for audio applications.
Although AO7407 is a single-gate FET, its gate can be left “floating” for some applications, allowing the gate to sit at a voltage potential determined by a voltage divider connected to ground and the device is called an “active” FET. In this way, the power dissipation is reduced significantly due to the gate bias voltage being set to the desired level.
The working principle of AO7407 is that the gate-source voltage controls the current flowing between drain and source. When the gate-source voltage is applied, a electron-hole pair of carriers is created at the interface between the semiconductor interface and the gate dielectric, creating a conductive channel between the drain and source. The current flowing between drain and source is proportional to the size of the applied gate-source voltage. As the gate-source voltage is increased, the amount of current flowing between the drain and source increases, allowing for more efficient operation of the FET.
As with any other device, the working and application of AO7407 is highly dependent on its environment. It should be correctly integrated in the system for its optimal performance, durability and reliability.
The specific data is subject to PDF, and the above content is for reference
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