AO7413_030 Allicdata Electronics
Allicdata Part #:

AO7413_030-ND

Manufacturer Part#:

AO7413_030

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH SC70-3
More Detail: P-Channel 20V 1.4A (Ta) 350mW (Ta) Surface Mount S...
DataSheet: AO7413_030 datasheetAO7413_030 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 113 mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The AO7413_030 is a low operating voltage, low noise, and low temperature-dependent P-channel MOSFET. The device is ideal for low and medium power applications, such as laptop computers, tablets, and other battery-operated electronic devices. It has a low drain-source resistance (RDSon) which enhances system performance and a high input impedance due to the MOS structure.

The AO7413_030 is designed with a P-Channel enhancement mode process. This type of MOSFET operates on the principle of a field-effect transistor (FET) consisting of a source, drain, and gate electrodes. The gate is insulated by a layer of insulation (oxide) which allows the device to be controlled remotely. When a positive voltage is applied to the gate, it creates a strong vertical electric field which modulates the current flow between the source and drain. This modulation is known as the electrostatic field effect.

The operating temperature range for the AO7413_030 is -55°C to 125°C. It has a maximum drain-source voltage of 20V, a maximum drain current of 5.5A, and a maximum power dissipation of 25W. The maximum gate-source turn-on voltage is 5V, and the gate threshold voltage is typically -2V. The device features low reverse transfer capacitance, low on-resistance, and a low gate-to-source capacitance. The on-resistance is lower than typically at 25°C, resulting in improved switching performance. Moreover, the device has a high transconductance, resulting in enhanced device speed.

The AO7413_030 is applicable to low-cost and low-power circuits, such as point-of-load (POL) converters, DC/DC converters, or other electronic devices. It can also be used as a load switch, driveline switch, or as a voltage regulator in devices that operate on battery power. Additionally, the device can be used in power sequencing applications such as battery charger systems and laptop adapters, where it is necessary to ensure that the correct voltage and current is supplied to the downstream circuitry.

In summary, the AO7413_030 is a low operating voltage P-channel MOSFET, which can be used for low- and medium-power applications such as laptop computers and tablets. It has low on-resistance, high transconductance, low gate-to-source capacitance, and is temperature-independent. The device\'s low on-resistance improves system performance and its high input impedance makes it suitable for power sequencing applications.

The specific data is subject to PDF, and the above content is for reference

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