AO7415 Allicdata Electronics
Allicdata Part #:

785-1092-2-ND

Manufacturer Part#:

AO7415

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 20V 2A SC70-6
More Detail: P-Channel 20V 2A (Ta) 630mW (Ta) Surface Mount SC-...
DataSheet: AO7415 datasheetAO7415 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 630mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AO7415 is a new type of Field-Effect Transistor (FET) with enhanced breakdown voltage and full ESD protection, which is suitable for use in high-power applications. This new device has a wide range of applications, specifically in the areas of power management, signal conditioning, and protection and sensing. As such, it is being widely adopted by the industrial, consumer and automotive industries.

AO7415 belongs to the class of Single-Gate MOSFETs, which is a type of FET with a single conducting channel formed by a metal-oxide-semiconductor. In other words, it is an insulated-gate field-effect transistor, in which the single gate is insulated from the drain and source terminal by an oxide layer. This layer acts as a gate voltage controlling a current flowing between the drain and the source. Owing to this configuration, AO7415 is an ideal choice for low-voltage and high-efficiency circuit design.

The working principle of AO7415 is simple yet effective. An electric field generated between the source and the gate controls the current flow between the source and the drain. When a positive voltage is applied at the gate terminal, it pulls the electrons off the drain, leaving the source with a positive voltage. This positive voltage at the source increases the current flowing between the source and the drain, thus increasing the device’s conductivity. On the other hand, if a negative voltage is applied at the gate, the carriers at the drain are attracted back, thus decreasing the current flow and reducing the conductivity of the device.

Furthermore, AO7415 is designed to withstand much higher voltages than conventional FETs, making it extremely robust and reliable. The high breakdown voltage of AO7415 enables it to handle a much higher load than regular FETs, allowing for greater power efficiency and reliability. In addition, the device also comes with full ESD protection, which makes it ideal for use in harsh environments and applications that involve high voltage surges.

The applications of AO7415 are rather varied and specific to its particular characteristics. AO7415 can be used as a switching device in DC-DC applications, such as power supplies and converters. It can also be used in industrial, consumer and automotive applications, such as motor control, lighting control, and electrical power regulation. In each of these instances, the device can be used to increase efficiency, reduce device size and cost, and also offer improved reliability.

In summary, AO7415 is a new type of FET specifically designed to provide enhanced breakdown voltage and full ESD protection. Its single-gate design makes it suitable for low-voltage applications, while its high breakdown voltage and ESD protection make it suitable for harsh environment and high-voltage applications. The device is quickly gaining popularity due to its wide range of applications and its performance efficiency. Therefore, AO7415 is a good choice for a variety of applications and offers high levels of reliability and cost-effectiveness.

The specific data is subject to PDF, and the above content is for reference

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