AOB20C60PL Allicdata Electronics
Allicdata Part #:

785-1718-2-ND

Manufacturer Part#:

AOB20C60PL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET NCH 600V 20A TO263
More Detail: N-Channel 600V 20A (Tc) 463W (Tc) Surface Mount TO...
DataSheet: AOB20C60PL datasheetAOB20C60PL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 463W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3607pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 260 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AOB20C60PL is a P-channel MOSFET which is a type of field-effect transistor (FET). It is an enhancement-mode silicon-gate device, meaning that it is designed to turn ON with very little input signal. This transistor type is mostly used in switching circuits and amplifier circuits.

The AOB20C60PL is designed according to the PowerTrench process technology, which is a chip-scale MOSFET that is created on an extremely thin die, making it ideal for applications needing low RDS(on) and small footprints. Furthermore, its TrenchFET design can offer exceptional levels of drain current (ID) compared to other transistors in a given footprint size and RDS(on).

The AOB20C60PL FET is especially useful for providing an adjustable range of electrical current in power driving applications. It is a popular choice among high-efficiency electronics, as it offers low on-resistance and total gate charge (Qg). Its total gate charge is a measure of how much energy is required to adjust the internal resistance and keep the FET turned ON. With a low Qg, this FET will consume less energy, making it an effective and efficient electronic device.

In terms of its typical application field, the AOB20C60PL MOSFET can be used in application such as logic level shifting, power supply regulation, current monitoring, power source switching and power management control, among others. It is a key component for several switching applications, which require excellent RDS(on), ultra-low gate charge, and high current switching capability, among others.

The AOB20C60PL P-channel MOSFET has a working principle that uses a strong electric field to regulate the electrical current flow. The voltage applied to the gate terminal of the FET will generate the electric field between the drain and source terminals. This electric field works inversely to the current flow, meaning that the higher the gate voltage, the lower the current flow.

Moreover, to turn the AOB20C60PL MOSFET OFF, it takes just a small change in gate-source voltage. In other words, by decreasing the voltage applied to the gate terminal, the drain-source current will reduce or even completely stop. This feature makes this MOSFET an ideal choice for several voltage-controlled switching applications for moderating the current flow.

In conclusion, the AOB20C60PL MOSFET is a common silicon-gate P-channel field-effect transistor device. It is typically used in switching circuits, amplifier circuits and power driving applications due to its low on-resistance and total gate charge. Additionally, it is a popular choice for voltage-controlled switching applications which are moderated through its working principle of using an electric field for regulating electrical current flow.

The specific data is subject to PDF, and the above content is for reference

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