Allicdata Part #: | AOB288L-ND |
Manufacturer Part#: |
AOB288L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N CH 80V 10.5A TO263 |
More Detail: | N-Channel 80V 10.5A (Ta), 46A (Tc) 2.1W (Ta), 93.5... |
DataSheet: | AOB288L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 93.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1871pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.9 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Ta), 46A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AOB288L is a high-performance, low-on-resistance MOSFET that is specifically designed for automotive applications. This N-channel MOSFET includes a silicon die, PN junctions, and drain-to-source terminals. Its specific design makes it suitable for a variety of high-voltage, low-noise applications in automotive, telecom, and other industries. With its low on-resistance and a high-speed switching capability, AOB288L is a versatile and reliable MOSFET device for a host of power circuit needs.
The AOB288L features a low 70nA maximum low-level threshold voltage and a high drain current capability of up to 42A. This makes it extremely useful for applications that require fast switching and minimal power dissipation. The device also features a low gate-bias voltage and a wide thermal range that enables it to operate in harsh ambient conditions. With its high-speed switching capability, the AOB288L can be relied upon to provide precise power control for many power management applications including motor control, voltage regulation, and load switching.
The working principle of AOB288L is based on a MOSFET architecture. It consists of a silicon die, PN junctions, and drain-to-source terminals, all connected in series. The gate terminal is used to control the flow of electrons, enabling the device to operate in a low-voltage, high-current mode. When the gate voltage is applied, the device switches from its off-state to its on-state. AOB288L can provide a voltage drop at its drain-source terminals that is very low compared to its gate-source terminal. This low voltage drop is ideal for applications that require precise power control and fast switching.
The AOB288L is an excellent choice for a wide variety of applications, including power management, motor control, voltage regulation, and load switching. Its low on-resistance and high-speed switching capability makes it an ideal choice for applications that require fast switching and minimal power dissipation. With its wide thermal range and low gate-bias voltage, it can provide reliable performance in even the harshest of conditions. Thus, the AOB288L is an ideal choice for a variety of automotive, telecom, and other high-voltage, low-noise applications.
The specific data is subject to PDF, and the above content is for reference
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