AOB29S50L Discrete Semiconductor Products |
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Allicdata Part #: | 785-1473-2-ND |
Manufacturer Part#: |
AOB29S50L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 500V 29A TO263 |
More Detail: | N-Channel 500V 29A (Tc) 357W (Tc) Surface Mount TO... |
DataSheet: | AOB29S50L Datasheet/PDF |
Quantity: | 1600 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 357W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1312pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26.6nC @ 10V |
Series: | aMOS™ |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 14.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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AOB29S50L Application Field and Working Principle
The AOB29S50L is a single MOSFET (metal-oxide semiconductor field-effect transistor) that is widely used in commercial, industrial, and military applications. This type of power-handling device has a few unique characteristics that make it very efficient in terms of supplying electrical power to a variety of devices. The AOB29S50L is capable of handling current up to 50A, and has a voltage rating of 30V. Its low profile package has a very low on-state resistance, and is small enough to fit in tight places with minimal surface area.
The most common application for an AOB29S50L is as an electronic switch, which requires a very low off-state resistance (Roff). The AOB29S50L’s relatively low Roff allows it to switch quickly, and it is also capable of handling large transient spikes of voltage and current without damage. Additionally, the AOB29S50L is suitable for use in high-side switches in automotive, industrial, and medical applications. Other typical applications include amplifiers, motor control, and HVAC (heating, ventilation and air conditioning) systems.
The working principle of the AOB29S50L is similar to other types of power-handling devices, particularly MOSFETs. It utilizes a metal-oxide gate and silicon substrate, which is formed by a process very similar to the formation of an integrated circuit. When an electrical current is passed through the metal-oxide gate, a memory channel is created in the silicon substrate, allowing current to pass through the device. This channel can be modulated via the metal-oxide gate, resulting in the ability to switch the device on and off quickly.
When the metal-oxide gate is open, current will flow from source to drain, allowing the device to act as a switch. When the gate is closed, the current is blocked, preventing current from passing through the device. The gate can also be modulated with external signals, allowing for precise control over the on and off states of the device. This type of control is often used to increase the efficiency of power-handling devices, as well as decrease electrical noise.
The AOB29S50L is a very efficient and reliable power-handling device, and it is used in a wide variety of applications. It has a very low on-state resistance, and it is very fast in terms of switching time. It is also suitable for many high-side applications, and it is capable of handling large transient spikes of both voltage and current. The AOB29S50L is an excellent choice for those looking for a reliable, high-performance MOSFET that can handle large amounts of current and voltage with excellent efficiency.
The specific data is subject to PDF, and the above content is for reference
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