AOB25S65L Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (D²Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	357W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1278pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	26.4nC @ 10V
Series:	aMOS™
Rds On (Max) @ Id, Vgs:	190 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AOB25S65L Application Field And Working PrincipleThe AOB25S65L is a single N-channel MOSFET produced by AOS which has the characteristics of excellent avalanche capability, very fast switching speed, and high efficiency. It is widely used in a variety of fields, such as telecommunication, automotive, and consumer electronics. This MOSFET is a three-terminal field-effect transistor (FET) composed of four distinct layers of semiconductor material, including source and drain regions, gate, and substrate. The gates are insulated from the source and drain regions by an ultrathin gate dielectric material, allowing the transistors to be controlled with relative ease and precision. When the gate voltage is 0V, the channel between the drain and source regions stays off, and the current that flows through the device can be considered to be zero. However, when the gate-source voltage is increased, electrons are “pulled” through the channel corresponding to the voltage, resulting in a conductive channel, and hence, a current flow through the FET. The channel between the drain and source can additionally be manipulated, as the width of the channel can be adjusted to control the current flow. This, in turn, allows the AOB25S65L to be used as a high-frequency switch and amplifier. The AOB25S65L also offers a number of operational advantages. This MOSFET has excellent avalanche capability, meaning that it is capable of suppressing the avalanche breakdown voltage. Secondly, its switching speed is very fast, meaning that it can be operated at very high frequencies. Moreover, the high efficiency of the AOB25S65L implies that there are low energy losses when it is used as an amplifier, allowing for better power efficiency in various applications. In addition to its technical merits, the AOB25S65L is also environmentally friendly. It features a lead-free and halogen-free packaging, meaning that it is free of hazardous materials and is safe for use in a variety of settings. The AOB25S65L has a wide range of applications, including power management, motor control, audio-video systems, high-speed data switches, and battery chargers. It can also be used in a variety of other applications that require fast switching speed, low on-resistance, and high power efficiency, such as audio and video amplifiers, current drives, and lighting controllers. In conclusion, the AOB25S65L is a versatile N-channel MOSFET with excellent avalanche capability and very fast switching speed, making it ideal for a variety of applications. It is also an environmentally friendly component due to its lead-free and halogen-free packaging and is highly efficient as well.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description