AOB2502L

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The AOB2502L is a single N-channel depletion-mode MOSFET, designed for a wide range of applications where high reliability, low on-resistance and low power loss are of particular importance.

The AOB2502L is optimized for loads of up to 50V and offers a low on-resistance of 0.3 ohms, making it suitable for high current applications. The chip also integrates a low on-state capacitance, which ensures switching efficiency and fast turn-on and turn-off times.

Fundamentally, the AOB2502L operates using the electrons flowing in and out of the channel and this is achieved through the composition of its structure. The gate of the FET is connected to the source-drain, while the source and drain are constructed of a series of thin and heavily doped n-type layers. These produce an electric field that attracts electrons from the source to the gate and forms a strong electric field at the source region. When a positive gate voltage is applied, the electric field becomes stronger and the electrons move away from the gate and create an inversion layer, which connects all the source and drain regions. Hence, a conducting channel is created, allowing a current to pass from the source to the drain. In order for the current to start flowing, a threshold voltage must be reached.

The AOB2502L is suitable for a wide range of applications, including switched-mode power supplies (SMPS) or buck converters, power over Ethernet (PoE) systems, automotive electronics, DC-DC converters, telecom and rectification systems. In addition, the device can be used as a rectifying diode in applications such as RFID and 12V to 6V converters.

The AOB2502L is highly reliable and has an excellent thermal performance thanks to its silicon-based body and its 3-pad TO-220 package, providing excellent dissipation. Furthermore, the device is designed to withstand high temperatures and has a thermal resistance of 17K/W.

In summary, the AOB2502L is a versatile, N-channel, depletion-mode MOSFET designed for applications where low on-resistance and low power loss are important. It operates using electrons flowing in and out of the channel and is reliably and thermally robust, thanks to its silicon-based body and 3-pad TO-220 package.

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