
Allicdata Part #: | AOD2HC60-ND |
Manufacturer Part#: |
AOD2HC60 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 2.5A TO252 |
More Detail: | N-Channel 600V 2.5A (Tc) 74W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.26001 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 466pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 800mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AOD2HC60 is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used for a range of applications. It features a blocking capability up to 500V and is designed to provide high performance, low power consumption, and enhanced thermal management. This MOSFET is ideal for switching applications, control circuits, and other applications with low voltages and low current applications.
The AOD2HC60 is a MOSFET that is available in both a three-terminal and four-terminal pinout. The three-terminal pinout configuration includes a drain, a source, and a gate. For the four-terminal pinout, two additional pins are available to be connected to other transistors, allowing the MOSFET to be used as a power switch or to provide electrical isolation. The four-terminal configuration offers several advantages and allows the device to be used in more complex applications.
The MOSFET operates by controlling the voltage and current levels on its gate. A voltage is applied to the gate and the drain and source pins to open or close the channel. This is achieved by controlling the amount of voltage applied to the gate and by regulating the current across the device. As the voltage is increased or decreased, the current flow changes within the MOSFET, allowing it to be used for switching applications.
The AOD2HC60 is also designed to be used for high power switching applications. When operating in a high power mode, the gate can be used to control the level of current that flows through the drain and source pins. This allows the device to be used in a range of applications, from AC/DC power control to high power switching. Additionally, the AOD2HC60 can be used to create reliable power regulation circuits and inverters.
The MOSFET also provides enhanced thermal management when operated in a high power mode. This is achieved through the incorporation of a heat sink into the MOSFET’s package. This heat sink dissipates the heat generated by the gate and the drain and source pins, allowing the device to continue to operate reliably even under high power conditions.
Overall, the AOD2HC60 is a highly efficient single MOSFET that is versatile enough to be used in a variety of applications. It is designed to provide high performance, low power consumption, and enhanced thermal management, making it an ideal choice for switching applications, control circuits, and power regulation circuits. Additionally, it is available in both a three-terminal and four-terminal pinout configuration, allowing it to be used in more complex applications.
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