Allicdata Part #: | 785-1728-5-ND |
Manufacturer Part#: |
AOW2502 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET NCH 150V 106A TO262 |
More Detail: | N-Channel 150V 16A (Ta), 106A (Tc) 6.2W (Ta), 277W... |
DataSheet: | AOW2502 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5.1V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 6.2W (Ta), 277W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3010pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 106A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOW2502 Application Field and Working Principle
AOW2502 is a single common source N-Channel depletion mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is manufactured by Advanced Power Semiconductor Technology (APST). AOW2502 is designed for high power applications like motor controllers, motion control systems and load switching. A MOSFET works in two modes - depletion mode and enhancement mode. In depletion mode, the MOSFET is on and provides a conducting path between drain and source. In enhancement mode, the MOSFET is off and there is no conducting path between source and drain.
The AOW2502 has a VDS Drain to Source Voltage rating of 500V, which is great for high power applications. It also has a maximum continuous drain current rating of 12A, a maximum gate to source voltage rating of 10V and a maximum drain to source break down voltage rating of 500V. The breakdown voltage rating indicates the highest voltage the device can withstand without permanent damage.
MOSFETs work on the principles of majority carrier conduction and gate control. Majority carrier conduction means that the amount of current flowing through the MOSFET is determined by the ratio of majority carriers and minority carriers. The majority carriers are impact ions or holes and the minority carriers are electrons. The gate control allows the user to control the drain-source current by changing the gate voltage.
MOSFETs are used in various fields like power circuits, amplifiers, audio systems, robotic systems and control systems. They are ideal choice for high-power applications due to their low on resistance and high voltage ratings. They are also used in integrated circuits to save space and reduce circuit complexity. AOW2502 is an ideal choice for motor control, motion control, load switching and other high power applications.
The working principle of AOW2502 is based upon the majority carrier conduction and gate control. When the gate voltage is below the threshold voltage, the device behaves like a diode and no current flows through the channel. When the gate voltage is above the threshold voltage, the mobile carriers (impact ions or holes) start to move and current begins to flow through the channel. The amount of current flow is determined by the ratio of majority and minority carriers. The gate voltage can be adjusted to control the drain-source current.
In conclusion, AOW2502 is a single common source N-Channel depletion MOSFET designed for high power applications. It has a Drain to Source Voltage rating of 500V and a maximum continuous drain current rating of 12A. It works on the principles of majority carrier conduction and gate control. It is ideal for motor control, motion control, load switching and many other high-power applications.
The specific data is subject to PDF, and the above content is for reference
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