Allicdata Part #: | 785-1730-5-ND |
Manufacturer Part#: |
AOW292 |
Price: | $ 1.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET NCH 100V 105A TO262 |
More Detail: | N-Channel 100V 14.5A (Ta), 105A (Tc) 1.9W (Ta), 30... |
DataSheet: | AOW292 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.16575 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 14.5A (Ta), 105A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 126nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6775pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 1.9W (Ta), 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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AOW292 Application Field and Working Principle
The AOW292 is a top-of-the-line, advanced field-effect transistor (FET) product developed and manufactured by Advanced On-Wire Solutions. As a single-gate FET, it is characterized by a large transconductance and low noise. It is capable of operating at extremely high frequencies and is highly suitable for radio frequency applications.
Application Field
The AOW292 FET is a great choice for applications that require high-speed response times or require extremely low noise. The device is suitable for use in receivers, amplifiers, and filters, as well as for fast switching applications. It is also suitable for power management due to its high frequency capability.
Working Principle
The AOW292 FET uses a single gate to control the current flow. It works by using electric fields to modulate the resistance of a channel between the source and the drain of the FET. When a voltage is applied to the gate, it creates an electric field, which changes the shape of the channel and modulates its resistance. The higher the gate voltage, the greater the resistance of the channel, and thus the greater the current flowing through the channel. The AOW292 FET provides excellent performance due to its high transconductance.
Conclusion
The AOW292 from Advanced On-Wire Solutions is a top-of-the-line single-gate FET that offers excellent performance for radio frequency applications, due to its high transconductance and low noise. The device is suitable for use in receivers, amplifiers, and filters, as well as for fast switching applications. It is also suitable for power management due to its high frequency capability.
The specific data is subject to PDF, and the above content is for reference
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