AOW292 Allicdata Electronics
Allicdata Part #:

785-1730-5-ND

Manufacturer Part#:

AOW292

Price: $ 1.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET NCH 100V 105A TO262
More Detail: N-Channel 100V 14.5A (Ta), 105A (Tc) 1.9W (Ta), 30...
DataSheet: AOW292 datasheetAOW292 Datasheet/PDF
Quantity: 1000
1000 +: $ 1.16575
Stock 1000Can Ship Immediately
$ 1.3
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6775pF @ 50V
FET Feature: --
Power Dissipation (Max): 1.9W (Ta), 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Description

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AOW292 Application Field and Working Principle

The AOW292 is a top-of-the-line, advanced field-effect transistor (FET) product developed and manufactured by Advanced On-Wire Solutions. As a single-gate FET, it is characterized by a large transconductance and low noise. It is capable of operating at extremely high frequencies and is highly suitable for radio frequency applications.

Application Field

The AOW292 FET is a great choice for applications that require high-speed response times or require extremely low noise. The device is suitable for use in receivers, amplifiers, and filters, as well as for fast switching applications. It is also suitable for power management due to its high frequency capability.

Working Principle

The AOW292 FET uses a single gate to control the current flow. It works by using electric fields to modulate the resistance of a channel between the source and the drain of the FET. When a voltage is applied to the gate, it creates an electric field, which changes the shape of the channel and modulates its resistance. The higher the gate voltage, the greater the resistance of the channel, and thus the greater the current flowing through the channel. The AOW292 FET provides excellent performance due to its high transconductance.

Conclusion

The AOW292 from Advanced On-Wire Solutions is a top-of-the-line single-gate FET that offers excellent performance for radio frequency applications, due to its high transconductance and low noise. The device is suitable for use in receivers, amplifiers, and filters, as well as for fast switching applications. It is also suitable for power management due to its high frequency capability.

The specific data is subject to PDF, and the above content is for reference

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