Allicdata Part #: | 785-1427-5-ND |
Manufacturer Part#: |
AOW29S50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 500V 29A TO262 |
More Detail: | N-Channel 500V 29A (Tc) 357W (Tc) Through Hole TO-... |
DataSheet: | AOW29S50 Datasheet/PDF |
Quantity: | 1000 |
Series: | aMOS™ |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 14.5A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26.6nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1312pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 357W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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AOW29S50 is a single type N-channel MOSFET, manufactured by a company named Fairchild Semiconductor. It is a power transistor characterized by low gate charge and low gate resistance. The main features of this power MOSFET are its high power density, ruggedness, reliability and flexibility. They are widely used in various power-electronic applications like switching regulators and power supplies, as well as amplifier circuits.
The MOSFET works on the principle of a field-effect transistor or FET. This type of transistor uses the electric field or voltage to control the conducting action of the semiconductor, rather than just changing the current. It basically works on the principle of a junction between two semiconductor, the source and drain. The gate of the MOSFET is the control element, which acts as an electric field. The gate voltage will either attract or repel the electrons in the channel between the source and the drain, thus controlling the flow of the electric current.
The AOW29S50 MOSFET is a very popular choice due to its low gate charge and low gate resistance. Its off-current is typically much lower than on-current. The current gain of this device is very high, which makes it ideal for use in high frequency, high switching speed applications. It is also an ideal choice for power switching, high voltage applications and a variety of digital and analog power applications.
The main advantages of using this MOSFET are that it is able to handle large amounts of power efficiently and effectively, making it ideal for applications where high power density is required. It also offers high switching speeds, low on-resistance and low off-resistance. It also has built-in protection against electrostatic discharge, making it an ideal choice for applications with high speed electronics.
The major applications for the AOW29S50 MOSFET are in automotive, computing, industrial and consumer electronics, including everything from personal computers to cell phones. It is also used in a wide range of industrial applications, such as in air bag systems, motor control and instrumentation.
Overall, the AOW29S50 MOSFET is a great choice when needing a power MOSFET with low gate charge, low gate resistance and high current gain. It is capable of offering flexibility, ruggedness and reliability, while providing high power density in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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