Allicdata Part #: | 785-1380-5-ND |
Manufacturer Part#: |
AOW2918 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V 13A TO262 |
More Detail: | N-Channel 100V 13A (Ta), 90A (Tc) 2.1W (Ta), 267W ... |
DataSheet: | AOW2918 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 267W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3430pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 90A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOW2918 is a field effect transistor (FET) which is designed and formulated with diverse applications in various fields. It is a single MOSFET and has a maximum drain current of 1.2A and is suitable to work at a wide range of ambient temperatures. It has a relatively large current rating and is used extensively in motor control and power converter applications.
An important feature of AOW2918 is its low on-resistance which saves power and is useful in current-sensitive applications where power dissipation must be kept to a minimum. This advanced technology permits extended operating temperature range and maximum power rating which makes the FET suitable for high-reliability applications. It is manufactured with the latest technology to meet high reliability requirements and offers a cost-effective solution to all applications.
The AOW2918 can be used in a variety of applications such as lighting, motor drives and power converters, switch mode power supplies, digital and linear control systems, audio amplification, robotics and other control applications where multiple FETs are used for high current or voltage switching. The use of this FET permits the design of circuits with minimum power consumption and high efficiency.
The working principle of AOW2918 is based on semiconductor physics. It has a gate, a source and a drain, and the operating principle which allows it to control current involves the implantation of an appropriate voltage between the gate and the source of the FET. This creates a gate-to-source electric field which modulates the flow of current between the drain and the source of the FET. This is accomplished by altering the characteristics of the device by controlling its abilities to pass current.
The AOW2918 is well suited for low power applications and is relatively straightforward to use. It uses advanced process technology to manufacture and is available in different power ratings and breakdown voltages which can be tailored to meet specific requirements. Its small size and low on-resistance makes it ideal for applications that require high-performance in low-profile spaces.
The AOW2918 is equipped with simple ESD protection, thermal shutdown and current protection features, which make it a reliable part for use in various industrial, automotive and consumer applications. With its versatility and performance, it is used in a variety of designs, from low-end to high-performance and can be used in combination with custom logic devices to create cost-effective and high-performance solutions.
In conclusion, AOW2918 is a single MOSFET with a large current rating and a low on-resistance that can be used in many applications. It is manufactured with advanced process technology for maximum reliability and features simple ESD protection, thermal shutdown and current protection. Its small size and wide operating temperature range make it suitable for various applications and offer cost-effective solutions.
The specific data is subject to PDF, and the above content is for reference
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