AOW25S65

Series:	aMOS™
Packaging:	Tube
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	190 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	26.4nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1278pF @ 100V
FET Feature:	--
Power Dissipation (Max):	357W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-262
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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AOW25S65 is a type of high power metal-oxide-semiconductor field effect transistor (MOSFET). It is a normally-off MOSFET, meaning it is designed to require a voltage applied to the gate to allow current flow through the source and drain. It is a vertical double diffused MOSFET (VDMOS) and features low on-resistance. The AOW25S65 is manufactured as a N-channel MOSFET and has a gate charge of 22 nC.The AOW25S65 can be used in a variety of applications, such as power management and conversion, high voltage motors, power tools, and other equipment. The AOW25S65 is particularly suited for applications with high current requiring low on-resistance. Because it is a normally-off device, it can also be used for applications requiring high levels of safety.The MOSFET consists of two terminals: the source, from which current flows out of the device, and the drain, which current flows into. Additionally, the device has a gate, which serves as a control terminal. Applying a positive voltage to the gate causes current to start flowing between the source and drain. The current is modulated by the magnitude of the applied gate voltage.When no voltage is applied to the gate, the device is in its "on" state. The device is conducting current in this state as the source and drain are connected and current is allowed to flow. When a voltage is applied to the gate, the device is in its "off" state. The source and drain terminals are not connected and no current is allowed to flow between them.The resistance of the AOW25S65 when in the "off" state is very high, usually measured in megohms. This means that a very low current can flow through the device, even when it is in the "off" state. This is especially important in applications that require high levels of safety, as this low current is enough to protect the device from physical damage.The working principle behind the AOW25S65 involves controlling a high current through the device with a low gate voltage. The voltage applied to the gate modulates the current that flows between the source and drain. When the gate voltage is increased, more electrons are allowed to flow from the source to the drain, which increases the current. The higher the gate voltage, the more current is allowed to flow. When the voltage is decreased, the flow of current is restricted, allowing for finer control of the current. The AOW25S65 is especially useful for applications that require precise control of high current, such as precision motor control.In summary, the AOW25S65 is a type of high power MOSFET that is suitable for a wide range of applications. It is a normally-off device and has a low gate charge, making it well-suited for applications requiring high current with precise control. The device is a VDMOS and works by controlling a high current flow through the device with a low voltage applied to its gate.

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