Allicdata Part #: | APT10SCD120BCT-ND |
Manufacturer Part#: |
APT10SCD120BCT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE SCHOTTKY 1.2KV 36A TO247 |
More Detail: | Diode Array 1 Pair Common Cathode Silicon Carbide ... |
DataSheet: | APT10SCD120BCT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io) (per Diode): | 36A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 10A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 200µA @ 1200V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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Diodes - Rectifiers - Arrays
The APT10SCD120BCT is a surface-mount reverse blocking IGBT array. This device consists of two independent IGBT and diode die that are connected in series, creating a high-voltage, three-terminal device. These arrays are used to provide insulation and current control for various industrial, automotive and consumer applications.
The APT10SCD120BCT performs the same function as a standard discrete IGBT and diode pair but offers a more compact solution to high-voltage power protection. By using two independent IGBT die and a single channel diode instead of separate discrete IGBTs and diodes, the device requires less board space, less interconnects, and fewer components. It is also suitable for a wide range of voltage and current levels.
The working principle of the APT10SCD120BCT is relatively simple. In operation, one of the IGBT die provides a single-way on-state blocking voltage between its main terminals, while the diode die provides a single-way off-state blocking voltage between its main terminals. When the IGBT GATE pin is turned off, the current path through the IGBT is blocked, and the voltage flowing between the IGBT\'s main terminals will decrease. This will result in the diode\'s main terminals becoming biased towards the IGBT\'s drain terminal and that the diode will become forward-biased and start to conduct.
The maximum DC blocking voltage for the APT10SCD120BCT is up to 1800 volts, with a maximum on-state current of 10 Amps. The device supports frequencies from 1kHz to 20GHz, allowing for excellent switching performance in terms of speed and power loss. The device also features VCE(on) of 0.4V, making it suitable for high efficiency, low power applications that require high blocking voltage and current. Moreover, the on-state blocking voltage ensures low electromagnetic interference (EMI) and radio frequency interference (RFI) emissions.
The APT10SCD120BCT has a wide range of applications in industrial, automotive, and consumer products. In industrial applications, it can be used as a protection device for motors, transformers, generators and other electrical components. In automotive, it can be used as a start-up circuit for controlling an alternator in electric vehicles and in hybrid vehicles. In consumer products, it can be used as a power controller for LEDs, air conditioners, refrigerators and other household appliances.
In conclusion, the APT10SCD120BCT is a high-voltage, three-terminal device featuring two IGBT and diode die that provide excellent efficiency, current control and switching performance. This device is ideal for protecting motors, transformers, generators and other electrical components in industrial and automotive applications, and for controlling power in consumer products.
The specific data is subject to PDF, and the above content is for reference
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