Allicdata Part #: | APT11GF120BRDQ1G-ND |
Manufacturer Part#: |
APT11GF120BRDQ1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 25A 156W TO247 |
More Detail: | IGBT NPT 1200V 25A 156W Through Hole TO-247 [B] |
DataSheet: | APT11GF120BRDQ1G Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 25A |
Current - Collector Pulsed (Icm): | 24A |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 8A |
Power - Max: | 156W |
Switching Energy: | 300µJ (on), 285µJ (off) |
Input Type: | Standard |
Gate Charge: | 65nC |
Td (on/off) @ 25°C: | 7ns/100ns |
Test Condition: | 800V, 8A, 10 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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APT11GF120BRDQ1G is an insulated-gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. It belongs to Infineon’s OptiMOS™ 5 series and is designed for applications in power electronics. It can control and convert power flows in a range of industrial, power supply, and consumer applications.
The APT11GF120BRDQ1G is a single module IGBT designed with the ability to handle high power and current requirements. It is rated for 600 V with a conduction current of 12 A, and features an integrated free-wheeling diode with a reverse voltage of 600 V. This module is designed to work with a minimum switching frequency of 50 kHz, and a maximum junction temperature of 150° C. It also has built-in thermal and load protections that can be configured to turn off in the event of over-temperature or over-current.
The IGBT in the APT11GF120BRDQ1G module is the core component of power electronics applications. It is an electrical switch that can control and convert power flows, and is used in a variety of applications including power supplies, motor control, audio and lighting devices, and more. The IGBT works by combining the advantages of a MOSFET (a metal-oxide-semiconductor field-effect transistor) and BJT (bipolar junction transistor). It has fast switching speed and low on-state voltage drop, which makes it an ideal choice for power applications.
The APT11GF120BRDQ1G is designed for easy integration into circuits and features simplified wiring diagrams for easy reference. Its fast switching time and low conduction losses make it an ideal choice for applications that require high efficiency. Its integrated free-wheeling diode provides protection against short-circuit events and helps reduce power losses from inductive loads. Lastly, its thermal protection ensures that the device will shut down in the event of overload.
APT11GF120BRDQ1G is a reliable and durable power module that can be used in a variety of industrial, consumer, and power supply applications. Its combination of fast switching speed, high power handling capability, integrated free-wheeling diode, thermal protection, and simplified wiring make it a good choice for designers looking to optimize their power electronic products.
The specific data is subject to PDF, and the above content is for reference
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