Series:	Thunderbolt IGBT®
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	42A
Current - Collector Pulsed (Icm):	45A
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 15A
Power - Max:	184W
Switching Energy:	150µJ (on), 215µJ (off)
Input Type:	Standard
Gate Charge:	75nC
Td (on/off) @ 25°C:	6ns/105ns
Test Condition:	400V, 15A, 10 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 [B]

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APT15GT60BRDQ1G Application Field and Working Principle

Introduction

The APT15GT60BRDQ1G is a single high voltage insulated gate bipolar transistor (IGBT) intended for motor drive applications. It is designed to give best-in-class performance in applications such as power converters, lighting, electric vehicles, and UPS systems. This IGBT is ideal for applications that require switching of high power levels at high frequencies. This IGBT uses planar structures to maximize switching speed, reduce losses and achieve a low friction coefficient between the emitter and the base.

Features

The APT15GT60BRDQ1G features a wide operating temperature range of -55°C to +150°C, making it suitable for a wide range of applications in different climates. The IGBT also has an extremely low on-state voltage drop of 4 volts. This enables minimal losses at high frequencies and high currents for higher efficiency. In addition, the IGBT also features short-circuit protection and short-circuit immunity that protect the module from any type of current or voltage overstress. The APT15GT60BRDQ1G is also housed in a very compact package, measuring only 50x17x15mm, which makes installation in areas with limited space easier. It has a base lead frame design that allows greater thermal conductivity and minimizes power loss. It also has a low gate threshold voltage which minimizes switching losses and increases performance efficiency.

Application Fields

The APT15GT60BRDQ1G is well suited for motor drive applications due to its high switching speeds and low on-state voltage drop. It is also applicable in UPS systems, power converters and high frequency switching applications. In addition, it can be used in lighting applications as it is capable of handling high power levels at high frequencies.

Working Principle

The APT15GT60BRDQ1G works on the principle of insulated gate bipolar transistor (IGBT) technology. It consists of a gate drive circuit, which passes current through the body of the IGBT transistor, thereby switching it on and off periodically. When the gate drive circuit is switched on, a voltage will be applied to the gate of the IGBT, which allows current to pass through the body of the IGBT, turning it on. The current will then be diverted from the collector of the IGBT to the emitter, thereby allowing the IGBT to conduct a certain amount of current. When the gate drive circuit is switched off, the source of current will be cut off and the IGBT will turn off. This process is repeated periodically to achieve the desired level of power control.

Conclusion

The APT15GT60BRDQ1G is a single high voltage insulated gate bipolar transistor (IGBT) designed specifically for motor drive applications. It has a wide operating temperature range, a low on-state voltage drop and it can handle high power levels and high frequencies. It is also housed in a small package which makes installation in tight areas easier. The APT15GT60BRDQ1G operates on an IGBT principle whereby the gate drive circuit turns the IGBT on and off via a voltage applied to the gate of the IGBT. This allows the IGBT to conduct a certain amount of current from the collector to the emitter. This process is repeated periodically to control the power of the device.

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