Allicdata Part #: | APT150GT120JR-ND |
Manufacturer Part#: |
APT150GT120JR |
Price: | $ 37.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 170A 830W SOT227 |
More Detail: | IGBT Module NPT Single 1200V 170A 830W Chassis Mou... |
DataSheet: | APT150GT120JR Datasheet/PDF |
Quantity: | 9 |
1 +: | $ 33.88140 |
10 +: | $ 31.68330 |
25 +: | $ 29.30260 |
100 +: | $ 27.47110 |
Series: | Thunderbolt IGBT® |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 170A |
Power - Max: | 830W |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 150A |
Current - Collector Cutoff (Max): | 150µA |
Input Capacitance (Cies) @ Vce: | 9.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | ISOTOP |
Supplier Device Package: | ISOTOP® |
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Transistors - IGBTs - Modules encompass a broad range of applications and technologies. The APT150GT120JR is one example of an IGBT (Insulated Gate Bipolar Transistor) module. This module combines the advantages of both the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and the BJT (Bipolar Junction Transistor) with additional features and enhanced performance.
The module’s maximum on-state blocking voltage capability of 600V and its current capability of 150A is one of the reasons it has been adopted for an array of industrial and consumer applications. These applications range from motor control, lighting, digital appliances, variable speed drives and solar power systems.
This module typically comprises six IGBTs and twelve free-wheel diodes. It utilizes a Built-In Intelligent Power Module’s (IPM) isolated packaging coating, which can improve the device’s reliability and efficiency. The device’s small size, direct cooling and low-inductance increased current capacity, make it well suited to many applications.
The APT150GT120JR’s working principle is fairly straightforward. When no electric signal is applied, the IGBT behaves like an open switch and prevents any power transfer. When an electric signal is applied, the IGBT acts like a closed switch and allows current to flow. This allows it to control the current and voltage applied to the load. The module uses several controls to regulate its operation, including an on/off control, a pulse width modulator, a frequency control and a power reduction circuit.
Depending on the application, the device can be used as either a half-bridge circuit or a single transistor circuit. In a half-bridge circuit, two IGBTs on the upper and lower sides act alternately to control the current. In the single transistor circuit, one IGBT acts as the switch to control the current with its on/off control.
IGBTs have become widely used for their low power consumption, low noise, high efficiency and cost effectiveness. The APT150GT120JR module has been widely used in motor control, lighting, digital appliances, variable speed drives and solar power systems due to its high performance, increased current capacity and robustness. With its many advantages, this module will continue to be a popular choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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