
Allicdata Part #: | APT20M120JCU2-ND |
Manufacturer Part#: |
APT20M120JCU2 |
Price: | $ 23.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1200V 20A SOT227 |
More Detail: | N-Channel 1200V 20A (Tc) 543W (Tc) Chassis Mount S... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 21.01300 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 543W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7736pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 672 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The APT20M120JCU2 is a high performance MOSFET with single chip and multiple-chip technology designed specifically for engineering application fields. It is well suited for both high frequency and low frequency operations and its low on-resistance allows the highest level of power to be transferred. In addition, the integrated gate drive circuitry and gate-to-source protection help ensure it is fault tolerant and reliable. In this article, we will explain the application field and working principle of the APT20M120JCU2.
The APT20M120JCU2 is a type of MOSFET, which stands for Metal-Oxide Semiconductor Field-Effect Transistor. It consists of a gate electrode, which is used to control the current flow between the source and drain electrodes. The gate electrode consists of thin layers of metal and a layer of oxide between them, thus, creating a high resistive barrier. The APT20M120JCU2 has very low on-resistance, which allows very large currents to be driven between the source and drain, which makes it suitable for high frequency operations. With its integrated gate drive circuitry and gate-to-source protection, the APT20M120JCU2 is ideal for engineering applications in the commercial, industrial, and medical sectors.
In order to understand how the APT20M120JCU2 works, it is important to understand the basics of how a MOSFET works. When a voltage is applied to the gate electrode, electrons move through the gate and form an electric field between it and the source/drain electrodes. This field causes the barrier between the source and drain electrodes to be reduced, allowing current to flow. The electric field can be very easily adjusted with minor adjustments to the gate voltage, allowing a large amount of power to be transferred. The integrated gate drive circuitry and gate-to-source protection allow the gate voltage to be more accurately controlled, for example, in order to protect the gate and source from over-voltages and over-currents.
The APT20M120JCU2 is an excellent choice for engineering application fields as it is highly flexible, due to its low on-resistance and fast switching times. It is also very reliable and is often used in commercial, industrial, and medical applications. Its integrated gate drive circuitry and gate-to-source protection make it even more suitable for such uses. It is also ideal for high speed operations in data processing and communications applications.
In summary, the APT20M120JCU2 is a type of MOSFET which is well suited for engineering applications, due to its low on-resistance, fast switching times, integrated gate drive circuitry, and gate-to-source protection. It is ideal for applications in the commercial, industrial, and medical sectors, and is also well suited for data processing and communications applications. It is very reliable and can handle large amounts of power.
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