Allicdata Part #: | APT20M120JCU3-ND |
Manufacturer Part#: |
APT20M120JCU3 |
Price: | $ 23.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1200V 20A SOT227 |
More Detail: | N-Channel 1200V 20A (Tc) 543W (Tc) Chassis Mount S... |
DataSheet: | APT20M120JCU3 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 21.01300 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 543W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7736pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 672 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The APT20M120JCU3 is a single MOSFET transistor designed for use in a wide range of applications, from automotive and power management systems to consumer electronics.
The APT20M120JCU3 is a 25V, 60A, P-channel enhancement mode lateral MOSFET. It is designed for maximum performance, efficiency, and reliability. It has a low on-state resistance (RDS(on)) of 27 mΩ and a low gate charge (Qg) of 13 nC. The device also features a high-speed switching capability with a high-voltage capability and low gate-to-source charge.
The APT20M120JCU3 is suitable for several types of power management applications and automotive control applications, such as in motor control, lighting control, and DC/DC converters. It is also used in display interfaces and mobile device power applications.
The APT20M120JCU3’s working principle is based on semiconductor physics. A MOSFET transistor is made up of metal oxide and two vertically-separated conductive elements. When a voltage is applied between the two conductive elements, a virtual electrical junction is created. This virtual junction acts as an insulated gate that controls the voltage that can be passed through the transistor.
The gate is charged with a certain voltage (usually 5V) to turn the transistor on. When the gate voltage reaches the transistor\'s threshold voltage, it turns on and becomes conductive. This reduces the resistance between the source and drain terminals and allows current to flow from the drain to the source. As the voltage is increased on the gate, it becomes easier for current to flow and the resistance between the source and drain terminals decreases. The resistance between the source and drain is determined by the voltage on the gate, which is why it\'s called the voltage-controlled resistant.
The APT20M120JCU3 has a threshold voltage of VGS(th) = 4.5V and a maximum gate-source voltage VGS(max) = 12V. This device can handle up to an 85 ampere source current and up to a 60 ampere drain current. It also features a low on-state resistance of 27 mΩ. Its low gate charge of 13 nC ensures high-speed switching capability and low power consumption.
The APT20M120JCU3 is a single MOSFET transistor designed for use in high performance and reliability applications. It has a low on-state resistance, low gate charge, and high-speed switching capability. It is suitable for motor control, lighting control, and DC/DC converters and is also used in display interfaces and mobile device power applications. The working principle of the APT20M120JCU3 is based on semiconductor physics and its low on-state resistance and low gate charge ensure maximum performance, efficiency, and reliability.
The specific data is subject to PDF, and the above content is for reference
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