APT33GF120LRDQ2G Discrete Semiconductor Products

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IGBTs are a type of transistor that combines the advantages of both bipolar transistors and MOSFETs. These devices are capable of switching power at high frequencies and are more reliable than conventional transistors. The APT33GF120LRDQ2G is a single IGBT module designed for high frequency switching applications.

The module features a fast turn-on and turn-off times, making it suitable for applications such as motor drives, high side switches, and solar inverters. It has a high breakdown voltage of 1200V with a maximum current rating of 120A. The module is also very efficient with a low on-state voltage drop of 1V at maximum current.

The APT33GF120LRDQ2G is built with a Gate Emitter Voltage (VGE) that can be independently regulated. This feature makes the module suitable for use with applications that require a fast switching time and the ability to accurately control the switching speed. Additionally, the module also features a built in temperature sensor that allows it to self-monitor and indicate when devices are operating at higher temperatures.

The APT33GF120LRDQ2G features an insulated gate structure and is able to control large currents with a low input current. This low-loss IGBT module is capable of switching power in the range of 650V and is also suitable for applications where a low on-state voltage drop is required. The APT33GF120LRDQ2G is able to operate in the temperature range from -55°C to 175°C.

The APT33GF120LRDQ2G works by using a voltage on a gate to control the linearly-switching on current. This voltage, when combined with the base current of the device, is used to turn the transistor on. When the current is switched off, the voltage will decrease and the base current of the transistor will decrease, thus switching the transistor off.

The APT33GF120LRDQ2G is a low-loss, high-frequency single IGBT module which provides reliable operation and is able to control large currents with a low input current. This module is suitable for applications that require high frequencies and accuracy in current regulation and offers excellent performance in a wide range of temperatures. The module is also very efficient with a low on-state voltage drop. With its insulated gate structure, the module provides accurate control of the switching speed and is an ideal choice for motor drives, high side switches, solar inverters and other power switching applications.

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