APT35GN120L2DQ2G

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APT35GN120L2DQ2G IGBTs are power semiconductor components used in applications requiring high current and high voltage, including solar inverter designs, motor control, switched-mode power supplies, welding, uninterruptible power supplies, lighting applications, and other power electronic applications. IBGTs are chosen for their fast switching speed and high DC current ratings, as well as their ability to drive large amounts of power.

The APT35GN120L2DQ2G utilizes a vertical planar structure IGBT with a double trench, which provides higher gain, higher blocking voltage, and faster switching speed. It is a 1,200V NPT IGBT with a rated continuous current of 35A and an on-state saturation voltage of the collector-emitter of 2.2V. This component has an insulation voltage of 2.5kV, an avalanche energy rating of 40mJ, and a turn-on voltage of 8V. The thermal resistance of the component is rated at 22.5°C/W

The working principle of a IGBT is based on the modification of a PMOS transistor. An IGBT transistor is a combination of an N-channel MOSFET and a PNP BJT. This allows for bi-directional and efficient power transfer, which can be easily and cost-effectively controlled via voltage. When voltage is applied to an IGBT, a path is created between the source and the drain, allowing current to flow through the component. The gate input is designed to provide the correct gate voltage to turn on and off the component, allow for current flow and voltage control.

APT35GN120L2DQ2G IGBTs are well-suited for a number of applications, including solar inverter designs, motor control, switching-mode power supplies, welding, uninterruptible power supplies, lighting applications, and other power electronic applications. They are a reliable and efficient choice for controlling large amounts of power and current.

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