APT38F80B2 Allicdata Electronics
Allicdata Part #:

APT38F80B2-ND

Manufacturer Part#:

APT38F80B2

Price: $ 13.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 800V 41A T-MAX
More Detail: N-Channel 800V 41A (Tc) 1040W (Tc) Through Hole T-...
DataSheet: APT38F80B2 datasheetAPT38F80B2 Datasheet/PDF
Quantity: 1000
30 +: $ 11.93510
Stock 1000Can Ship Immediately
$ 13.13
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1040W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: POWER MOS 8™
Rds On (Max) @ Id, Vgs: 240 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT38F80B2 is a single P-Channel EN-enhancement mode MOSFET with a single-gate drive. It is designed to be used in DC-to-DC converter switch modes, Class-D audio amplifier, power supplies and other applications.

The APT38F80B2 is a major component of the power switch systems, which are being increasingly used in modern electronic equipment. It is mainly used to switch power on and off, protect against short circuits, and provide additional protection in power distribution and other power management applications.

The main component of the APT38F80B2 is a P-channel enhancement mode MOSFET. Enhancement mode MOSFETs are on-state when the gate voltage is low, and off-state when the gate voltage is high. The gate voltage controls the current flow. When the device is in the off-state, no current flows. When it is in the on-state, the current is controlled by the gate voltage.

The device consists of two parts: the control gate, which is the gate voltage that is applied to the device, and the body, which is used to control the current through the device. The device has an on-resistance of 80mΩ when it is on and an off-resistance of less than 150mΩ. The gate-source capacitance is typically 3.0nF, which is relatively low compared to some other P-channel MOSFETs.

The working principle of the APT38F80B2 is quite simple. When a positive gate voltage is applied to the control gate, the device is in the on-state, allowing the current to flow from the source to the drain. When the gate voltage is removed, the device is in the off-state and no current flows. The amount of current that is allowed to flow between the source and the drain is determined by the voltage applied to the control gate.

The APT38F80B2 is suitable for use in a variety of applications, particularly in DC-to-DC converter switch modes, Class-D audio amplifier and power supplies. In DC-to-DC converter switch modes, the device is used to switch power on and off, protect against short circuits, and provide additional protection in power distribution and other power management applications. Class-D audio amplifier designs use the device to switch power on and off in order to amplify the audio signal. In power supplies, it is used to switch power on and off as well as to control current flows.

In conclusion, the APT38F80B2 is a single P-Channel EN-enhancement mode MOSFET with a single-gate drive. It is typically used in DC-to-DC converter switch modes, Class-D audio amplifier, power supplies and other applications. The working principle is quite simple, as it is controlled by an applied gate voltage. It has low on-resistance and low off-resistance, making it suitable for power switch systems and other applications.

The specific data is subject to PDF, and the above content is for reference

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