APT35GN120BG

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Transistors - IGBTs - Single

The APT35GN120BG is an insulated gate bipolar transistor (IGBT) designed for use in high-end power control applications that require high switching frequencies and power conversions, and therefore, high switching abilities. The APT35GN120BG provides a protected high-speed IGBT with low on-state voltage drop, low capacitance, low switching losses, and high safe operating area. It offers a one-touch resilient structure, suitable for high frequency switching applications, such as switching power supplies, lighting ballasts, automotive systems, motor drives and more.

The main features of the APT35GN120BG include:

• 1200V blocking voltage
• 6A maximum collector current
• CPCR of 550V
• Tj (junction temperature max.) of 150°C
• PTM of 450V
• 30A short circuit withstand current
• Superior inverter withstand voltage

The APT35GN120BG\'s working principle is based on the characteristics of the silicon substrate itself. The silicon substrate of the IGBT is extremely thin and a large area of it is exposed when it forms the two complementary sides of the transistor, called the collector and the emitter. The collector and the emitter of the APT35GN120BG are separated by a thin layer of silicon dioxide (SiO₂).

When a suitable voltage is applied to the collector, it creates a field of electrons in the silicon dioxide. This electrons flow in the opposite direction of the voltage and create an electric field in the other side of the semiconductor. This electric field is commonly referred to as the gate. Thus, when the gate is forward biased, electrons start flowing into the gate, allowing for current to flow through the transistor.

In this manner, the APT35GN120BG is able to switch on-off depending on the voltage applied to the gate. This allows the APT35GN120BG to be used in a wide range of applications, including power supplies, motor controllers, lighting ballasts, and more. Its superior switching characteristics, low capacitance and superior inverter withstand voltage make it an ideal choice for a variety of high power applications.

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