APT30GN60BDQ2G Allicdata Electronics

APT30GN60BDQ2G Discrete Semiconductor Products

Allicdata Part #:

APT30GN60BDQ2G-ND

Manufacturer Part#:

APT30GN60BDQ2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 600V 63A 203W TO247
More Detail: IGBT Trench Field Stop 600V 63A 203W Through Hole ...
DataSheet: APT30GN60BDQ2G datasheetAPT30GN60BDQ2G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 203W
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 400V, 30A, 4.3 Ohm, 15V
Td (on/off) @ 25°C: 12ns/155ns
Gate Charge: 165nC
Input Type: Standard
Switching Energy: 525µJ (on), 700µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Pulsed (Icm): 90A
Current - Collector (Ic) (Max): 63A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The APT30GN60BDQ2G is a type of Insulated Gate Bipolar Transistor (IGBT) that have a single in-built built-in feature as well as a variety of characteristics which make them ideal for use in a wide range of applications. This particular device is a positive temperature coefficient transistor which can handle both high voltage and high current load requirements and is one of the latest generation of IGBTs.An IGBT is a fast-switching power semiconductor device that combines the characteristics of a metal oxide semiconductor field effect transistor (MOSFET) with those of a bipolar junction transistor (BJT). This combination makes the IGBT versatile, offering superior performance in a wide range of applications including power supplies, automotive electronics, solar energy, lighting systems, computer power management and many more.The APT30GN60BDQ2G provides a maximum operating voltage of 800V, a maximum operating current of 30A and maximum power output of 72W. It also features low turn-on voltage, low loss, and high-speed switching, making it an excellent choice for applications that require reliable and efficient power control.The main advantages of the APT30GN60BDQ2G are its low conduction losses and a high breakdown voltage which make it suitable for high-current applications. Its high-speed switching characteristics ensure that it can be used to provide fast switching speeds with minimal switching losses.The APT30GN60BDQ2G is a single-channel device which is available in two different package formats. It is available in a through hole format and surface mount format. This provides users with the flexibility to customize their component footprint accordingly. Additionally, its integral chip design ensures that it is easy to assemble.The working principle of the APT30GN60BDQ2G is simple. It is composed of a MOSFET and a BJT which act in series to form a device known as an emitter-coupled pair. The MOSFET acts as a voltage-controlled switch, while the BJT acts as a current-controlled switch. When an external current is applied, the MOSFET acts as an on-state switch, while the BJT acts as an off-state switch. This allows the device to control the current in the circuit by controlling the voltage.The APT30GN60BDQ2G is well suited for applications such as automotive, aerospace, consumer electronics, power supplies, computers, industrial systems and automation. It is also well suited for use in applications that require fast switching times, high breakdown voltage and low conduction losses.Overall, the APT30GN60BDQ2G is an excellent choice for a wide range of applications. Its wide range of features, high performance and flexibility make it ideal for a variety of applications. Additionally, its low cost and easy assembly make it an attractive option for those looking for a reliable and cost-effective way to control power and manage current in their electronic systems.

The specific data is subject to PDF, and the above content is for reference

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