APT36GA60BD15 Discrete Semiconductor Products

Power - Max:	290W
Supplier Device Package:	TO-247 [B]
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	400V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C:	16ns/122ns
Gate Charge:	18nC
Input Type:	Standard
Switching Energy:	307µJ (on), 254µJ (off)
Series:	POWER MOS 8™
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 20A
Current - Collector Pulsed (Icm):	109A
Current - Collector (Ic) (Max):	65A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

The APT36GA60BD15 is a single, 650V, common-emitter IGBT (insulated-gate bipolar transistor) module, sourced and manufactured by APT. It is a reliable, long-life device, which has been specifically designed for a variety of applications that require high-power density and low EMI (electromagnetic interference). The device is based on the latest vertical trench cell technology, which means that it has superior current-carrying capabilities and low on-resistance losses.

Application Field

The APT36GA60BD15 is suitable for a wide range of applications, including home appliances, consumer electronics, LED lighting, motor drives, industrial automation, power supplies, solar power systems and smart grids. The device is suitable for applications that require high-frequency switching, as well as applications that require low-power triggering. It is also suitable for applications requiring high-power capacitive loading or high-frequency igniting.

Working Principle

The APT36GA60BD15 is based on insulated gate bipolar transistor (IGBT) principles, which are a type of bipolar transistor that use an insulating layer between the gate and control electrodes in order to manage the current flow. This allows for a greater level of control over the current flow, enabling the device to handle higher voltages and currents more efficiently than traditional transistors. When the base voltage is increased, electrons start to flow from the collector to the emitter of the transistor, leading to an increase in the current flow. This is because, when the IGBT is turned on, holes in the p-n junction between the collector and the emitter are filled, which allows current to flow from the p-region to the n-region. In an IGBT, the current flow is controlled by the gate terminal, whereas in a normal bipolar transistor it is controlled by the base voltage. The main benefit of using an IGBT over a normal bipolar transistor is that the gate current is much lower than a normal bipolar transistor and can be switched much faster.

Conclusion

The APT36GA60BD15 is a single, 650V, common-emitter IGBT module that is suitable for a wide range of applications. It is based on the latest vertical trench cell technology, which means that it has superior current-carrying capabilities and low on-resistance losses. Its working principle is based on insulated gate bipolar transistor (IGBT) principles; current flow is controlled by the gate terminal, which allows for much faster switching than traditional transistors. Altogether, the APT36GA60BD15 is a reliable, long-life device that offers high-power density and low EMI, making it an ideal choice for a variety of applications.

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