APT40GP60B2DQ2G Discrete Semiconductor Products |
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Allicdata Part #: | APT40GP60B2DQ2G-ND |
Manufacturer Part#: |
APT40GP60B2DQ2G |
Price: | $ 10.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 100A 543W TMAX |
More Detail: | IGBT PT 600V 100A 543W Through Hole |
DataSheet: | APT40GP60B2DQ2G Datasheet/PDF |
Quantity: | 30 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 9.76500 |
10 +: | $ 8.87922 |
25 +: | $ 8.21345 |
100 +: | $ 7.54754 |
250 +: | $ 6.88155 |
Series: | POWER MOS 7® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 100A |
Current - Collector Pulsed (Icm): | 160A |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 40A |
Power - Max: | 543W |
Switching Energy: | 385µJ (on), 350µJ (off) |
Input Type: | Standard |
Gate Charge: | 135nC |
Td (on/off) @ 25°C: | 20ns/64ns |
Test Condition: | 400V, 40A, 5 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 Variant |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBTs, or Insulated Gate Bipolar Transistors, have become a very important device for modern engineering and electrical applications. The type of IGBT denoted by the acronym APT40GP60B2DQ2G is particularly useful for a wide variety of applications. This type of IGBT can be classified as a single transistor and has a wide range of working principles and applications.
When it comes to their working principles, APT40GP60B2DQ2G transistors are based on the same principles as other types of IGBTs. This means they combine the fast switching of a MOSFET with the high breakdown protection of a bipolar junction transistor. This combination increases the device breakdown voltage and allows for higher current ratings. Additionally, APT40GP60B2DQ2G IGBTs have an integrated gate protection function for better electrical performance. This means that a damage-proof state is maintained even when exposed to high voltages, making this type of IGBT particularly robust and reliable.
In terms of their application field, the APT40GP60B2DQ2G IGBTs are suitable for extensive use in a variety of devices and machines. They are highly valued for their reliability and high performance. This type of IGBT has a wide range of application fields, such as in rectification circuits, motor drives, power converters, and inverters. These devices are used in industries such as automotive, aerospace, communications, and telecommunications. As these IGBTs offer strong performance, they are also widely used in industrial automation, home appliances, UPS systems, and lighting systems. Moreover, these transistors are also used in power electronics applications such as wind turbine systems, solar energy systems, and electric vehicles.
Overall, the APT40GP60B2DQ2G IGBTs have many useful qualities and applications. The unique combination of MOSFET and bipolar junction transistor technology offers excellent performance and breakdown protection, coupled with an integrated gate protection. Additionally, these transistors can be used in a wide range of applications, from industrial and commercial to automotive and home use. In any application, these IGBTs will offer reliable and consistent performance for many years.
The specific data is subject to PDF, and the above content is for reference
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