APT47F60J

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FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are semiconductor devices that can be used for switching or controlling the flow of electricity in an electronic circuit. The APT47F60J is a MOSFET device that is specifically designed for use in power supply applications. It has very low on-resistance and is capable of carrying currents up to 60A at a low voltage drop. This makes it ideal for applications such as DC/DC converters, motor control circuits, and LED lighting.

Features

The APT47F60J is a P-channel enhancement-mode MOSFET that is rated at 60A and 1800V. It has an ultra-low on-resistance of 6.4mΩTyp, meaning that it can provide very efficient power conversion for high-current applications. It also has a very low temperature rise of less than 10°C, making it suitable for applications where thermal management is important. Additionally, the APT47F60J has built-in ESD protection, making it capable of handling transients without damage.

Application Field

The APT47F60J is ideally suited for use in DC/DC converters, as it has a very low on-resistance and can carry large currents with minimal voltage drop. It is also suitable for use in motor control circuits, as its low on-resistance and pulse handling capabilities allow for efficient driving of the motor without generating excess heat. Finally, it is an excellent choice for high-power LED lighting applications, as its high current carrying capacity allows the LED to operate at its maximum brightness with minimal heat and power loss.

Working Principle

The APT47F60J is a P-channel depletion-mode MOSFET, which means that it operates in a closed-gate configuration. When a positive voltage is applied to the gate, the conduction channel is opened, allowing current to flow from the drain to the source. As the voltage is increased, the current increases proportionally. When the voltage is removed, the conduction channel is closed, preventing any further current flow.

The APT47F60J also has built-in ESD protection, which protects the device from electrostatic discharge. If an ESD event occurs, the built-in protection circuit will absorb the energy, protecting the MOSFET from damage. This additional protection makes the APT47F60J an excellent choice for applications where ESD protection is required.

Conclusion

The APT47F60J is a P-channel enhancement-mode MOSFET that is rated at 60A and 1800V. It has a very low on-resistance of 6.4mΩTyp and can handle transients up to 20V. These features make the APT47F60J an excellent choice for a variety of high-power applications, including DC/DC converters, motor control circuits, and LED lighting. Additionally, the built-in ESD protection makes it suitable for use in applications where ESD protection is a necessity.

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