APT42F50S Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package:	D3Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	625W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6810pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	170nC @ 10V
Series:	POWER MOS 8™
Rds On (Max) @ Id, Vgs:	130 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	42A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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APT42F50S Application Field and Working Principle

An APT42F50S is a N-channel enhancement-mode power metal-oxide-semiconductor field-effect transistor (MOSFET) used for a variety of applications, from basic switching to high-end power control and regulation.The APT42F50S has a high current-handling capacity in a small package and is used for DC and low-frequency AC applications or load switching. It has four terminals, including a gate, a source, a drain, and a body (substrate). Compared to a bipolar junction transistor (BJT), this device can provide high input impedance and low conduction losses. In addition, the maximum drain‐source voltage (V_DS) can be up to 500 V.

Field of Application

The APT42F50S is suitable for high power applications like industrial power conversion, motor control, and robotics; point of load regulation in communications, datacom, server, and driver systems; and various high power devices and switching power supply applications.The device can be used in systems such as electric motors and fan controllers, electro-hydraulic valves, and power inverters as power switches. In addition, its high thrust capability and high-input impedance make it suitable for digital switching applications, such as power switching for heavily loaded 3.3V and 5V buses, and for both AC and DC power conversion. Its features include: low voltage gate-triggering threshold, low conduction losses, and high speed operation.

Working Principle

The operation of a MOSFET is similar to an open-drain BJT. A MOSFET has an active component, the source and drain terminals, and an internal gate voltage which controls the conducting of the channel between the source and drain terminals.When the gate electrode is not biased, current does not flow between the source and the drain. However, when a voltage is applied at the gate, the electric field created causes the threshold voltage of the MOSFET to be exceeded. This causes a conducting channel to be formed between the source and the drain, allowing electrons to flow from source to drain.The current flowing through the device is determined by the value of the gate voltage and the resistance of the channel. The higher the gate voltage and the lower the channel resistance, the more current the device allows to pass.When the gate voltage is removed, the device returns to its non-conducting state.

Conclusion

The APT42F50S is a versatile and reliable power MOSFET with a wide application range, including power conversion, motor control and robotics, point of load regulation, switching power supply, and digital switching applications.It is easy to understand the operation of the device because the gate voltage controls the current flow between the source and drain terminals and the current flow is dependent on the gate voltage and the resistance of the channel.The various features of the APT42F50S, such as its high current-handling capacity and low conduction losses, make it an ideal choice for high power applications.

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