APT42F50S Discrete Semiconductor Products |
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Allicdata Part #: | APT42F50S-ND |
Manufacturer Part#: |
APT42F50S |
Price: | $ 8.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 42A D3PAK |
More Detail: | N-Channel 500V 42A (Tc) 625W (Tc) Surface Mount D3... |
DataSheet: | APT42F50S Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 7.58758 |
Specifications
Series: | POWER MOS 8™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 6810pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 625W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D3Pak |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Description
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APT42F50S Application Field and Working Principle
An APT42F50S is a N-channel enhancement-mode power metal-oxide-semiconductor field-effect transistor (MOSFET) used for a variety of applications, from basic switching to high-end power control and regulation.The APT42F50S has a high current-handling capacity in a small package and is used for DC and low-frequency AC applications or load switching. It has four terminals, including a gate, a source, a drain, and a body (substrate). Compared to a bipolar junction transistor (BJT), this device can provide high input impedance and low conduction losses. In addition, the maximum drain‐source voltage (VDS) can be up to 500 V.Field of Application
The APT42F50S is suitable for high power applications like industrial power conversion, motor control, and robotics; point of load regulation in communications, datacom, server, and driver systems; and various high power devices and switching power supply applications.The device can be used in systems such as electric motors and fan controllers, electro-hydraulic valves, and power inverters as power switches. In addition, its high thrust capability and high-input impedance make it suitable for digital switching applications, such as power switching for heavily loaded 3.3V and 5V buses, and for both AC and DC power conversion. Its features include: low voltage gate-triggering threshold, low conduction losses, and high speed operation.Working Principle
The operation of a MOSFET is similar to an open-drain BJT. A MOSFET has an active component, the source and drain terminals, and an internal gate voltage which controls the conducting of the channel between the source and drain terminals.When the gate electrode is not biased, current does not flow between the source and the drain. However, when a voltage is applied at the gate, the electric field created causes the threshold voltage of the MOSFET to be exceeded. This causes a conducting channel to be formed between the source and the drain, allowing electrons to flow from source to drain.The current flowing through the device is determined by the value of the gate voltage and the resistance of the channel. The higher the gate voltage and the lower the channel resistance, the more current the device allows to pass.When the gate voltage is removed, the device returns to its non-conducting state.Conclusion
The APT42F50S is a versatile and reliable power MOSFET with a wide application range, including power conversion, motor control and robotics, point of load regulation, switching power supply, and digital switching applications.It is easy to understand the operation of the device because the gate voltage controls the current flow between the source and drain terminals and the current flow is dependent on the gate voltage and the resistance of the channel.The various features of the APT42F50S, such as its high current-handling capacity and low conduction losses, make it an ideal choice for high power applications.The specific data is subject to PDF, and the above content is for reference
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