Allicdata Part #: | APT44GA60BD30C-ND |
Manufacturer Part#: |
APT44GA60BD30C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 78A 337W TO247 |
More Detail: | IGBT PT 600V 78A 337W Through Hole TO-247 [B] |
DataSheet: | APT44GA60BD30C Datasheet/PDF |
Quantity: | 1000 |
Switching Energy: | 409µJ (on), 450µJ (off) |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Test Condition: | 400V, 26A, 4.7 Ohm, 15V |
Td (on/off) @ 25°C: | 16ns/102ns |
Gate Charge: | 128nC |
Input Type: | Standard |
Series: | POWER MOS 8™ |
Power - Max: | 337W |
Vce(on) (Max) @ Vge, Ic: | 1.6V @ 15V, 26A |
Current - Collector Pulsed (Icm): | 130A |
Current - Collector (Ic) (Max): | 78A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | PT |
Part Status: | Obsolete |
Packaging: | Tube |
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The APT44GA60BD30C is a single insulated-gate bipolar transistor (IGBT) device. It is part of the IGBT family of transistors and is designed for use in high-current power electronics applications, such as motor drives, uninterruptible power supplies, welders, and large inverters.
The APT44GA60BD30C is a three-terminal semiconductor device, consisting of an emitter, collector, and base electrodes. The emitter is the negative terminal, the collector is the positive terminal, and the base is the input terminal. When a voltage is applied to the base terminal, it creates an electric field between the emitter and collector, which results in forward current flow across the collector-emitter junction. This forward current flow is achieved because the application of the voltage to the base creates holes and electrons in the collector-emitter region, thus allowing charge carriers to migrate across the junction.
The device can switch up to 600 Amperes of forward-biased current, with short circuit protection (OCP) and a wide range of temperatures from -55 degrees Celsius to +150 degrees Celsius. It is optimized for low conduction losses, high dV/dt immunity, and high switching speed. The gate-emitter voltage can be as low as 2.5V, and the device has an internal back-bias circuit that provides fast switching from high-side MOSFET to low-side MOSFET.
The APT44GA60BD30C is suitable for a wide range of applications, such as AC/DC motor drives, bridge rectifiers, uninterruptible power supplies, motor starters, power inverters, and many others. In motor drives and power inverters applications, the device can be used to switch high side and low side MOSFETs, allowing the motor to be switched between high and low speeds while preventing the motor from drawing large amounts of current. The device is also suitable for use in welding applications, where it can be used to switch between high and low voltages in order to prevent overheating and damage to the welder and the welded material.
The APT44GA60BD30C is designed for simple, efficient and reliable operation in many power electronics applications. Its wide range of operating voltage, current, and temperature ranges make it suitable for a variety of applications, from motor drives and power inverters to welding. Furthermore, its fast switching times and high dV/dt immunity provide excellent performance in many applications. In summary, the APT44GA60BD30C is a great choice for reliable and efficient power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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