APT43GA90BD30 Allicdata Electronics

APT43GA90BD30 Discrete Semiconductor Products

Allicdata Part #:

APT43GA90BD30-ND

Manufacturer Part#:

APT43GA90BD30

Price: $ 6.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 900V 78A 337W TO247
More Detail: IGBT PT 900V 78A 337W Through Hole TO-247 [B]
DataSheet: APT43GA90BD30 datasheetAPT43GA90BD30 Datasheet/PDF
Quantity: 48
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 6.34410
10 +: $ 5.70843
25 +: $ 5.20078
100 +: $ 4.69344
250 +: $ 4.31288
500 +: $ 3.93232
Stock 48Can Ship Immediately
$ 6.98
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 78A
Current - Collector Pulsed (Icm): 129A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Power - Max: 337W
Switching Energy: 875µJ (on), 425µJ (off)
Input Type: Standard
Gate Charge: 116nC
Td (on/off) @ 25°C: 12ns/82ns
Test Condition: 600V, 25A, 4.7 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Description

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Transistors - IGBTs - Single

APT43GA90BD30 Application Field and Working Principle

The APT43GA90BD30 belongs to the family of IGBTs (Insulated Gate Bipolar Transistors) and it is a single N-channel device. It consists of a monolithic body with two independent power circuits and a gate protection circuit that is generally used in high power applications.

This type of device is ideal for quasi resonant circuits and especially those applications that require high power, low losses and reliable switching capability such as switched mode power supplies, AC and DC motor drives, UPS systems, power inverters, or as polarity protection in high power applications.

The current carrying capability of the APT43GA90BD30 is mainly based on the current rating indicated by the manufacturer which is either determined by the rated collector-emitter voltage and collector current or, in some cases, by the collector-emitter voltage and the maximum current capability.

Regarding the operation of the APT43GA90BD30, the gate can be driven open with a positive gate voltage and this will enable the IGBT to conduct current. When the gate voltage is below the specified threshold, the IGBT will stop conducting current, due to the blocking of the circuit.

The polysilicon gate of the APT43GA90BD30 is structurally separated from the collector and emitter, and this allows for a greater current gain and a better immunity against dV/dt, EMI and cross-conduction conditions than the conventional bipolar transistors would.

Compared to the ordinary MOSFETs, the IGBTs offer increased load capacity, higher power ratings, high frequencies, and efficient operation. Furthermore, the device combines the high switching speed and high input impedance of the MOSFETs with the low on-state operational losses and short switching times of the bipolar transistors.

To summarize, the APT43GA90BD30 is well suited for a wide range of applications that require high power, high switching frequencies, low switching losses and high currents due to its efficient and reliable operation.

The specific data is subject to PDF, and the above content is for reference

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