Name: APT45GR65B2DU30 Discrete Semiconductor Products
Brand: Microsemi Corporation
SKU: APT45GR65B2DU30-ND
Price: 5.03 USD
Availability: InStock

APT45GR65B2DU30 Discrete Semiconductor Products
Allicdata Part #:	APT45GR65B2DU30-ND
Manufacturer Part#:	APT45GR65B2DU30
Price:	$ 5.03
Product Category:	Discrete Semiconductor Products
Manufacturer:	Microsemi Corporation
Short Description:	INSULATED GATE BIPOLAR TRANSISTO
More Detail:	IGBT NPT 650V 118A 543W Through Hole T-MAX™ [B2]
DataSheet:	APT45GR65B2DU30 Datasheet/PDF
Quantity:	1000
Lead Free Status / RoHS Status:	Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):	1 (Unlimited)

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Specifications

Packaging:	Bulk
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	118A
Current - Collector Pulsed (Icm):	224A
Vce(on) (Max) @ Vge, Ic:	2.4V @ 15V, 45A
Power - Max:	543W
Input Type:	Standard
Gate Charge:	203nC
Td (on/off) @ 25°C:	15ns/100ns
Test Condition:	433V, 45A, 4.3 Ohm, 15V
Reverse Recovery Time (trr):	80ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	T-MAX™ [B2]
Series:	--

Description

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The APT45GR65B2DU30 is a single-packed Insulated Gate Bipolar Transistor (IGBT) which offers excellent performance and reliability. This transistor is composed of an N-type and P-type Field Effect Transistor (FET) used in parallel with a junction gate transistor in order to increase current handling capabilities and lower turn-on voltage. This makes them ideal for a wide range of applications, including motor control, power supplies, motor control, and renewable energy systems.The structure of an IGBT consists of an N-type FET and a P-type FET, connected in parallel and separated by an oxide barrier. The oxide barrier provides electrical insulation between the two transistors, allowing the IGBT to switch on and off quickly, minimizing losses. The N-type FET operates as the "input" of the transistor, while the P-type FET acts as the "output". In addition, the IGBT also employs a "gate" transistor, which is connected to the N-type FET and acts as a control element.When no voltage is applied to the "gate" of the IGBT, the transistor will remain in its "off" state. However, when a voltage is applied to the gate, the N-type FET will conduct current, allowing the transistor to switch "on". This voltage is known as the "gate turn-on voltage" and is typically around 5 volts. The P-type FET will then draw current and the IGBT will enter its "on" state.In terms of its application field, the APT45GR65B2DU30 is used primarily for motor control, due to its high efficiency, low noise, and excellent temperature characteristics. It is well-suited for a wide range of applications, from industrial motors to generators. It is also suitable for both pulse-width-modulated (PWM) and phase-controlled applications.The APT45GR65B2DU30 is also extensively used in renewable energy systems, such as wind and solar energy plants, as it allows for rapid control of power output. It is also used in EV charging applications and industrial automation systems. Additionally, it can be used in a variety of power supply applications, including high voltage rectifiers and Uninterruptible Power Supplies (UPS).In conclusion, the APT45GR65B2DU30 is a reliable IGBT which offers excellent performance and wide application possibilities. It is widely used in motor control, renewable energy systems, EV charging, and power supply applications. The use of this IGBT allows for rapid control of power output and high efficiency operation.

The specific data is subject to PDF, and the above content is for reference

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