Allicdata Part #: | APT47N60BC3G-ND |
Manufacturer Part#: |
APT47N60BC3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 47A TO-247 |
More Detail: | N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-... |
DataSheet: | APT47N60BC3G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 2.7mA |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7015pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 417W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
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The APT47N60BC3G is a device that belongs to the MOSFETs-single category of transistors. This type of device is used for controlling the on/off state of power applications. It is an N-channel MOSFET that is capable of transferring current in both directions. It works by creating a channel between the source and drain electrodes when an electric field is applied. The channel contains a thin layer of silicon that is surrounded by a gate oxide, acting as an electrically conductive path between them. This is what allows for currents to be transferred between the electrodes when it is activated.
The channel is controlled by the gate electrode. When a positive voltage is applied to the gate electrode, it creates an electric field that attracts electrons from the source. This creates a conductive path between the source and drain electrodes and causes a current to flow through the channel. Conversely, when a negative voltage is applied to the gate electrode, it reduces the effect of the electric field, which reduces or eliminates the flow of current.
The APT47N60BC3G is a well-regarded device due to its low on-resistance rating and wide operating range. It is a 600V, 47A power MOSFET. This means that it is capable of handling up to 600V and 47A of current. It has a very low on-resistance rating of 40mΩ (typical) and a high operating temperature range of -55°C to 175°C. It is also capable of fast switching speeds, with a typical rise and fall time of 5.5ns. considering these impressive specifications, it is no wonder that the APT47N60BC3G is so commonly used in a wide variety of power applications.
In addition to its impressive performance, the APT47N60BC3G is also highly reliable. It features advanced active and passive protection measures to help ensure a long product life. These include overvoltage and overtemperature protection designed to prevent device failure even in the most demanding environments. It also contains dv/dt protection, electrostatic discharge (ESD) protection, and undervoltage lockout (UVLO) to help prevent accidental damage. Its proven reliability makes the APT47N60BC3G the ideal choice for use in high-reliability applications such as medical, industrial, and automotive.
Due to its great performance and reliability, the APT47N60BC3G is used in a variety of applications such as motor control, lighting systems, power supplies, home appliance control, and LED driver control. It is also used in battery management systems and solar inverter control. In summary, the APT47N60BC3G is a low-on-resistance, high-tightening device with an impressive operating range and reliable protection measures, which makes it suitable for a wide variety of power applications.
The specific data is subject to PDF, and the above content is for reference
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