Allicdata Part #: | APT50GR120B2-ND |
Manufacturer Part#: |
APT50GR120B2 |
Price: | $ 8.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 117A 694W TO247 |
More Detail: | IGBT NPT 1200V 117A 694W Through Hole TO-247 |
DataSheet: | APT50GR120B2 Datasheet/PDF |
Quantity: | 8 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 7.64190 |
10 +: | $ 6.94953 |
25 +: | $ 6.42852 |
100 +: | $ 5.90726 |
250 +: | $ 5.38602 |
500 +: | $ 5.03855 |
Power - Max: | 694W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 600V, 50A, 4.3 Ohm, 15V |
Td (on/off) @ 25°C: | 28ns/237ns |
Gate Charge: | 445nC |
Input Type: | Standard |
Switching Energy: | 2.14mJ (on), 1.48mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 200A |
Current - Collector (Ic) (Max): | 117A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
APT50GR120B2 IGBT (insulated gate bipolar transistor) is a type of semiconductor that forms an electronic switch between two input terminals. A current applied to its base terminal affects the resistance between its two source and drain electrodes. IGBTs are often used in applications where fast switching and high power switching are required.
APT50GR120B2 Application Field
APT50GR120B2 IGBTs are primarily used in motor control, industrial drives, welding, and lighting applications. They are also often used in medical and power supplies, as well as other high power and temperature applications. The device\'s low on-state voltage and high on-state current make it an ideal choice for applications requiring high efficiency and low power losses. Additionally, APT50GR120B2 IGBTs are also capable of high switching speeds and reduce switching losses. For example, they are commonly used in automotive and high-reliability applications by allowing lower electromagnetic interference (EMI) while improving efficiency.
APT50GR120B2 Working Principle
The APT50GR120B2 IGBT operates based on a relatively simple principle. When a voltage is applied to the IGBT’s gate, electrons flow from the n-type material to the p-type material, reducing the resistance between the source and drain electrodes. This forces them to become forward-biased, which in turn allows current to flow from the positive to the negative terminal. Since the gate voltage determines the amount of electrons injected into the base region, the current through the IGBT can be accurately controlled by adjusting the gate voltage.
Another property that makes APT50GR120B2 IGBT an attractive option is its high voltage and current capability. This is due to the fact that the IGBT\'s gate insulation is relatively thick and the electric field created by the gate voltage is greater than traditional transistors. This allows for higher breakdown voltages and moderately higher current ratings. Furthermore, the gate voltage of APT50GR120B2 IGBTs is low, which reduces the switching loss associated with controlling them. As a result, they are capable of high-frequency operation with minimal power losses, allowing them to be used in a variety of applications.
In summary, APT50GR120B2 IGBTs offer a reliable switching solution for applications requiring a high current and voltage capability. Furthermore, their low gate voltage and low switching losses allow them to be used in fast switching applications. Finally, their low on-state voltage, high on-state current, and high switching speed combine to make them an ideal choice for many high-reliability applications and medical and power supplies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
APT50GN60BG | Microsemi Co... | 3.65 $ | 1000 | IGBT 600V 107A 366W TO247... |
APT54GA60B | Microsemi Co... | 4.59 $ | 1000 | IGBT 600V 96A 416W TO-247... |
APT50GS60BRG | Microsemi Co... | 5.22 $ | 1000 | IGBT 600V 93A 415W TO247I... |
APT54GA60BD30 | Microsemi Co... | 5.54 $ | 1000 | IGBT 600V 96A 416W TO247I... |
APT50GR120L | Microsemi Co... | 6.87 $ | 1000 | IGBT 1200V 117A 694W TO26... |
APT50GS60BRDLG | Microsemi Co... | 7.0 $ | 1000 | IGBT 600V 93A 415W TO247I... |
APT50GP60BG | Microsemi Co... | 8.85 $ | 1000 | IGBT 600V 100A 625W TO247... |
APT50GP60B2DQ2G | Microsemi Co... | 9.93 $ | 1000 | IGBT 600V 150A 625W TMAXI... |
APT50GT120B2RDQ2G | Microsemi Co... | 11.03 $ | 1000 | IGBT 1200V 94A 625W TO247... |
APT50GT120LRDQ2G | Microsemi Co... | 11.85 $ | 1000 | IGBT 1200V 106A 694W TO26... |
APT50GF120B2RG | Microsemi Co... | 13.15 $ | 1000 | IGBT 1200V 135A 781W TMAX... |
APT50GT120B2RDLG | Microsemi Co... | 13.8 $ | 8 | IGBT 1200V 106A 694W TO-2... |
APT50GT60BRDQ2G | Microsemi Co... | -- | 119 | IGBT 600V 110A 446W TO247... |
APT50GN60BDQ2G | Microsemi Co... | -- | 113 | IGBT 600V 107A 366W TO247... |
APT50GT120B2RG | Microsemi Co... | 12.08 $ | 294 | IGBT 1200V 94A 625W TO247... |
APT50GN120L2DQ2G | Microsemi Co... | 13.2 $ | 82 | IGBT 1200V 134A 543W TO26... |
APT50GT60BRG | Microsemi Co... | -- | 53 | IGBT 600V 110A 446W TO247... |
APT50GF120LRG | Microsemi Co... | -- | 98 | IGBT 1200V 135A 781W TO26... |
APT50GS60BRDQ2G | Microsemi Co... | -- | 1000 | IGBT 600V 93A 415W TO247I... |
APT50GN120B2G | Microsemi Co... | 8.22 $ | 19 | IGBT 1200V 134A 543W TO-2... |
APT50GR120B2 | Microsemi Co... | 8.41 $ | 8 | IGBT 1200V 117A 694W TO24... |
APT50N60JCU2 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 52A SOT-... |
APT56F50B2 | Microsemi Co... | 11.27 $ | 41 | MOSFET N-CH 500V 56A TO-2... |
APT5010LFLLG | Microsemi Co... | 14.71 $ | 30 | MOSFET N-CH 500V 46A TO-2... |
APT53F80J | Microsemi Co... | 45.7 $ | 41 | MOSFET N-CH 800V 57A SOT-... |
APT50M38JLL | Microsemi Co... | 50.21 $ | 53 | MOSFET N-CH 500V 88A SOT-... |
APT53N60BC6 | Microsemi Co... | -- | 47 | MOSFET N-CH 600V 53A TO-2... |
APT56M50L | Microsemi Co... | -- | 49 | MOSFET N-CH 500V 56A TO-2... |
APT5010JLLU2 | Microsemi Co... | 22.92 $ | 73 | MOSFET N-CH 500V 41A SOT-... |
APT5014SLLG/TR | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 35A TO-2... |
APT58M50JCU3 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 58A SOT2... |
APT53N60SC6 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 53A D3PA... |
APT56F60B2 | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 60A TO-2... |
APT58F50J | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 58A SOT-... |
APT50M65JLL | Microsemi Co... | 31.41 $ | 1000 | MOSFET N-CH 500V 58A SOT-... |
APT58M80J | Microsemi Co... | 37.49 $ | 1000 | MOSFET N-CH 800V 58A SOT-... |
APT5010B2FLLG | Microsemi Co... | 14.7 $ | 24 | MOSFET N-CH 500V 46A T-MA... |
APT51F50J | Microsemi Co... | -- | 4 | MOSFET N-CH 500V 51A SOT-... |
APT58M50JU2 | Microsemi Co... | 15.86 $ | 1000 | MOSFET N-CH 500V 58A SOT2... |
APT58M50JU3 | Microsemi Co... | 16.65 $ | 1000 | MOSFET N-CH 500V 58A SOT-... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT