APT50GR120B2 Allicdata Electronics
Allicdata Part #:

APT50GR120B2-ND

Manufacturer Part#:

APT50GR120B2

Price: $ 8.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1200V 117A 694W TO247
More Detail: IGBT NPT 1200V 117A 694W Through Hole TO-247
DataSheet: APT50GR120B2 datasheetAPT50GR120B2 Datasheet/PDF
Quantity: 8
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 7.64190
10 +: $ 6.94953
25 +: $ 6.42852
100 +: $ 5.90726
250 +: $ 5.38602
500 +: $ 5.03855
Stock 8Can Ship Immediately
$ 8.41
Specifications
Power - Max: 694W
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 600V, 50A, 4.3 Ohm, 15V
Td (on/off) @ 25°C: 28ns/237ns
Gate Charge: 445nC
Input Type: Standard
Switching Energy: 2.14mJ (on), 1.48mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 117A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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APT50GR120B2 IGBT (insulated gate bipolar transistor) is a type of semiconductor that forms an electronic switch between two input terminals. A current applied to its base terminal affects the resistance between its two source and drain electrodes. IGBTs are often used in applications where fast switching and high power switching are required.

APT50GR120B2 Application Field

APT50GR120B2 IGBTs are primarily used in motor control, industrial drives, welding, and lighting applications. They are also often used in medical and power supplies, as well as other high power and temperature applications. The device\'s low on-state voltage and high on-state current make it an ideal choice for applications requiring high efficiency and low power losses. Additionally, APT50GR120B2 IGBTs are also capable of high switching speeds and reduce switching losses. For example, they are commonly used in automotive and high-reliability applications by allowing lower electromagnetic interference (EMI) while improving efficiency.

APT50GR120B2 Working Principle

The APT50GR120B2 IGBT operates based on a relatively simple principle. When a voltage is applied to the IGBT’s gate, electrons flow from the n-type material to the p-type material, reducing the resistance between the source and drain electrodes. This forces them to become forward-biased, which in turn allows current to flow from the positive to the negative terminal. Since the gate voltage determines the amount of electrons injected into the base region, the current through the IGBT can be accurately controlled by adjusting the gate voltage.

Another property that makes APT50GR120B2 IGBT an attractive option is its high voltage and current capability. This is due to the fact that the IGBT\'s gate insulation is relatively thick and the electric field created by the gate voltage is greater than traditional transistors. This allows for higher breakdown voltages and moderately higher current ratings. Furthermore, the gate voltage of APT50GR120B2 IGBTs is low, which reduces the switching loss associated with controlling them. As a result, they are capable of high-frequency operation with minimal power losses, allowing them to be used in a variety of applications.

In summary, APT50GR120B2 IGBTs offer a reliable switching solution for applications requiring a high current and voltage capability. Furthermore, their low gate voltage and low switching losses allow them to be used in fast switching applications. Finally, their low on-state voltage, high on-state current, and high switching speed combine to make them an ideal choice for many high-reliability applications and medical and power supplies.

The specific data is subject to PDF, and the above content is for reference

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