APT58M50JCU3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

APT58M50JCU3 is a single-packaged, high-current MOSFET that uses advanced trench MOSFET technology to achieve excellent RDSon and low gate charge. Part of Allegro Microsystems, Inc.\'s PowerTrench® family of products, this power MOSFET offers superior package reliability and low gate drive power consumption. The product provides high-efficiency power conversion in a wide range of applications and is suitable for use in critical switching applications in automotive, industrial, and consumer markets.

Application Field

The APT58M50JCU3 is suitable for a wide range of applications, from high current motor drives to more traditional power, envelope tracking, and audio applications. The product enables direct drive of both incandescent and LED bulbs and is ESD protection and electrostatic discharge immunity. This device is rated for an operating temperature range of -40°C to 175°C, making it suitable for automotive, military and industrial applications. Additionally, the APT58M50JCU3 is suitable for use in high-power density, high-output switching DC-DC applications such as power converters, power supplies, DC-DC converters, lighting systems, and motor control. It is also suitable for high-power switching applications such as rectifier circuit modules and power switch control.

Working Principle

APT58M50JCU3 is a power MOSFET, which is suitable for switching in the most stringent high-voltage and high-current circuits. The device utilizes advanced trench MOSFET technology to provide high performance and low gate charge, along with low operating temperature, low package stress, and low gate drive power consumption. The device\'s on-state resistance, RDSon, is as low as 0.1 Ohms and is capable of handling 0.74A peak current. The power MOSFET provides wide body-drain, which enables the device to handle high currents while maintaining low thermal resistance.

The device operates in an enhancement mode of operation, where the gate voltage needs to be driven high with respect to the source in order to turn the power MOSFET on. When the voltage at the gate reaches a certain level, typically 5V, the device turns on and the drain-source voltage drops to VGS(th) which is typically 0.2V. Above this VGS(th) the device turns on and current starts to flow from the source to the drain. The ability to operate in the enhancement mode of operation makes this power MOSFET suitable for use in wide variety of high power switching applications.

The APT58M50JCU3 features a current-limited low-side gate driver with input over-voltage protection for added reliability. The device has an integrated deadtime control and protection diode to protect the gate from high-voltage transients. The product is RoHS compliant and is an effective solution for high power switching applications.

The specific data is subject to PDF, and the above content is for reference