| Allicdata Part #: | APT50M65JLL-ND |
| Manufacturer Part#: |
APT50M65JLL |
| Price: | $ 31.41 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 500V 58A SOT-227 |
| More Detail: | N-Channel 500V 58A (Tc) 520W (Tc) Chassis Mount IS... |
| DataSheet: |  APT50M65JLL Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 28.55790 |
| 10 +: | $ 26.70700 |
| 100 +: | $ 23.15630 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | ISOTOP® |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 520W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7010pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 141nC @ 10V |
| Series: | POWER MOS 7® |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 29A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The APT50M65JLL is a high-speed switching, logic-level, N-Channel MOSFET, which belongs to a family of standard silicon-gate signal field effect transistors. It is one of the most widely used MOSFETs due to its wide range of application fields and high performance. This article will discuss the application areas and working principles of the APT50M65JLL.The APT50M65JLL is a high-density, general-purpose Field Effect Transistor, and is suitable for applications such as voltage regulators, audio amplifiers, and switching supplies. It is suitable for applications that require a low threshold voltage, and high breakdown voltage. The low on-resistance of the APT50M65JLL is suitable for high current switching and providing high power dissipation. The transistor is also capable of providing a high switching speed, and can handle up to 100V at a switching rate of 50V/ns.The APT50M65JLL has an N-channel layout, meaning it can be used as a switch. It is composed of a silicon substrate, a metal oxide semiconductor (MOS) gate, and a dielectric (gate oxide) layer. The gate oxide layer acts as an insulator between the gate and the substrate, allowing the transistor to operate with very little leakage current.The working principle of the APT50M65JLL is based on the movement of charge carriers within the device. When a voltage is applied to the gate, it induces an electric field within the substrate and the dielectric layer. This electric field causes a change in the shape of the channel, and this channel shape controls the flow of electrons, or current, from the source to the drain. The current flow is dependent on the voltage applied to the gate, and the physical characteristics of the transistor.The APT50M65JLL is mainly used in circuits that require high switching speeds and high current capabilities. It is widely used in automotive applications such as fuel injectors, dynamo circuits, starter circuits and heavy duty commercial vehicles. In addition, it is used in power conversion applications such as AC/DC converters and switching power supplies. In summary, the APT50M65JLL is a popular, general-purpose N-Channel MOSFET that is suitable for a variety of applications due to its high switching speed and low on-resistance. It is widely used in automotive and power conversion applications, and is capable of providing high current and power dissipation. Further, its low threshold voltage and high breakdown voltage make it suitable for a range of high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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