APT50GT120B2RDQ2G Allicdata Electronics
Allicdata Part #:

APT50GT120B2RDQ2G-ND

Manufacturer Part#:

APT50GT120B2RDQ2G

Price: $ 11.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1200V 94A 625W TO247
More Detail: IGBT NPT 1200V 94A 625W Through Hole
DataSheet: APT50GT120B2RDQ2G datasheetAPT50GT120B2RDQ2G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
60 +: $ 10.02340
Stock 1000Can Ship Immediately
$ 11.03
Specifications
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 800V, 50A, 4.7 Ohm, 15V
Td (on/off) @ 25°C: 24ns/230ns
Gate Charge: 340nC
Input Type: Standard
Switching Energy: 2330µJ (off)
Power - Max: 625W
Series: Thunderbolt IGBT®
Current - Collector Pulsed (Icm): 150A
Current - Collector (Ic) (Max): 94A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The APT50GT120B2RDQ2G is part of the family of single IGBTs products designed by IXYS Corporation. It is a generically-categorized insulation-gate bipolar transistor (IGBT), specifically designed and targeted for industrial applications.

The primary application field of the APT50GT120B2RDQ2G is designed to control power throughout varied industrial applications. It is used in a wide variety of configurations, from the control of high power switch to full bridge isolated gate drivers. It features an additional isolated Logic Level Inhibit pin allowing for immediate shut-off of the device, allows for the APT50GT120B2RDQ2G to be incorporated into a variety of power management applications.

In terms of functionality, the APT50GT120B2RDQ2G operates in two modes: on-state (collector-emitter mode) and off-state (gate-emitter mode). In on-state mode, the device allows current to pass through the collector when the gate is supplied with a suitable voltage. On the other hand, in off-state mode, the gate can be floated and the device acts as an open switch. The device is able to withstand a high collector-emitter voltage and is able to withstand up to 25 A of maximum collector current.

The APT50GT120B2RDQ2G also comes with an enhanced safe operating area (SOA). It offers an improved thermal resistance with reduced external parts, resulting in greater power driver integration. This along with the superior control of current provides safer and effective operation when used in switching processes.

Furthermore, it features an ultra-soft switching characteristic that prevents damage to the circuit or device due to switching. It also features an avalanche energy rating of 175 mJ and a safe operating temperature range of -40℃ to +150℃. The APT50GT120B2RDQ2G can also be mounted on a heatsink for improved heat transfer and a longer life of the device.

The APT50GT120B2RDQ2G IGBT is an ideal choice for power control applications due to its wide operational temperature range, enhanced SOA, ultra-soft switching characteristic, and superior current control. It is suitable for use in consumer electronics, motor control, power supplies, consumer appliances and other industrial applications.

The specific data is subject to PDF, and the above content is for reference

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