Allicdata Part #: | APT50GT120B2RDQ2G-ND |
Manufacturer Part#: |
APT50GT120B2RDQ2G |
Price: | $ 11.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 94A 625W TO247 |
More Detail: | IGBT NPT 1200V 94A 625W Through Hole |
DataSheet: | APT50GT120B2RDQ2G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
60 +: | $ 10.02340 |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 50A |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Test Condition: | 800V, 50A, 4.7 Ohm, 15V |
Td (on/off) @ 25°C: | 24ns/230ns |
Gate Charge: | 340nC |
Input Type: | Standard |
Switching Energy: | 2330µJ (off) |
Power - Max: | 625W |
Series: | Thunderbolt IGBT® |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 94A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | NPT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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?The APT50GT120B2RDQ2G is part of the family of single IGBTs products designed by IXYS Corporation. It is a generically-categorized insulation-gate bipolar transistor (IGBT), specifically designed and targeted for industrial applications.
The primary application field of the APT50GT120B2RDQ2G is designed to control power throughout varied industrial applications. It is used in a wide variety of configurations, from the control of high power switch to full bridge isolated gate drivers. It features an additional isolated Logic Level Inhibit pin allowing for immediate shut-off of the device, allows for the APT50GT120B2RDQ2G to be incorporated into a variety of power management applications.
In terms of functionality, the APT50GT120B2RDQ2G operates in two modes: on-state (collector-emitter mode) and off-state (gate-emitter mode). In on-state mode, the device allows current to pass through the collector when the gate is supplied with a suitable voltage. On the other hand, in off-state mode, the gate can be floated and the device acts as an open switch. The device is able to withstand a high collector-emitter voltage and is able to withstand up to 25 A of maximum collector current.
The APT50GT120B2RDQ2G also comes with an enhanced safe operating area (SOA). It offers an improved thermal resistance with reduced external parts, resulting in greater power driver integration. This along with the superior control of current provides safer and effective operation when used in switching processes.
Furthermore, it features an ultra-soft switching characteristic that prevents damage to the circuit or device due to switching. It also features an avalanche energy rating of 175 mJ and a safe operating temperature range of -40℃ to +150℃. The APT50GT120B2RDQ2G can also be mounted on a heatsink for improved heat transfer and a longer life of the device.
The APT50GT120B2RDQ2G IGBT is an ideal choice for power control applications due to its wide operational temperature range, enhanced SOA, ultra-soft switching characteristic, and superior current control. It is suitable for use in consumer electronics, motor control, power supplies, consumer appliances and other industrial applications.
The specific data is subject to PDF, and the above content is for reference
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