APT6030BN Allicdata Electronics
Allicdata Part #:

APT6030BN-ND

Manufacturer Part#:

APT6030BN

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 600V 23A TO247AD
More Detail: N-Channel 600V 23A (Tc) 360W (Tc) Through Hole TO-...
DataSheet: APT6030BN datasheetAPT6030BN Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Series: POWER MOS IV®
Rds On (Max) @ Id, Vgs: 300 mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The APT6030BN is a field-effect transistor (FET) designed for use in various circuit applications. Commonly known as an N-channel Metal Oxide Semiconductor (MOSFET), it is a single-gate device that acts as a switch between a power source and a load in a circuit. Its wide range of applications in power electronics and its reliable performance make the APT6030BN an excellent choice for low-power switching, audio amplifiers, motor control, and other power circuits.

The APT6030BN is a 30V single N-channel enhancement-mode MOSFET with a maximum drain-source voltage of 25V. It features a low gate-source capacitance of 20pF and low on-resistance of 0.014 Ohms. This low resistance makes the APT6030BN suitable for use in power circuits as it minimizes power loss. Additionally, the FET has a low gate charge, making it easier to switch at high frequencies without significant distortion. The APT6030BN is designed for switching and amplifier applications up to 100MHz, making it suitable for a variety of applications.

The working principle of the APT6030BN is simple. When a positive voltage is applied to the gate, it creates an electrically isolated channel from source to drain. This creates a path for the electrons to flow, turning the transistor “on”. When the voltage is removed from the gate, the electron channel is blocked and the transistor “off”. The APT6030BN is a depletion-mode MOSFET which means that the drain-source current flows when the gate is not connected to the source. This configuration allows the FET to be used in high-side switching configurations.

The APT6030BN can be used in a variety of power electronics applications including, but not limited to, switching regulators, DC-DC converters, DC-AC inverters, audio amplifiers, and motor control. This FET offers excellent electrical performance in its class and is designed for easy integration and low-power switching applications. Additionally, the APT6030BN is highly robust and reliable, making it an ideal choice for a wide range of industrial and commercial applications.

Overall, the APT6030BN is an ideal choice for low-power switching applications. Its low gate-source capacitance and low on-resistance make it suitable for power electronics applications, and its high-frequency switching capability enables it to be used for a variety of applications. The APT6030BN’s reliable performance and robust design make it an excellent choice for a wide range of industrial and commercial applications.

The specific data is subject to PDF, and the above content is for reference

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