Allicdata Part #: | APT6030BN-ND |
Manufacturer Part#: |
APT6030BN |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 23A TO247AD |
More Detail: | N-Channel 600V 23A (Tc) 360W (Tc) Through Hole TO-... |
DataSheet: | APT6030BN Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | POWER MOS IV® |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 11.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The APT6030BN is a field-effect transistor (FET) designed for use in various circuit applications. Commonly known as an N-channel Metal Oxide Semiconductor (MOSFET), it is a single-gate device that acts as a switch between a power source and a load in a circuit. Its wide range of applications in power electronics and its reliable performance make the APT6030BN an excellent choice for low-power switching, audio amplifiers, motor control, and other power circuits.
The APT6030BN is a 30V single N-channel enhancement-mode MOSFET with a maximum drain-source voltage of 25V. It features a low gate-source capacitance of 20pF and low on-resistance of 0.014 Ohms. This low resistance makes the APT6030BN suitable for use in power circuits as it minimizes power loss. Additionally, the FET has a low gate charge, making it easier to switch at high frequencies without significant distortion. The APT6030BN is designed for switching and amplifier applications up to 100MHz, making it suitable for a variety of applications.
The working principle of the APT6030BN is simple. When a positive voltage is applied to the gate, it creates an electrically isolated channel from source to drain. This creates a path for the electrons to flow, turning the transistor “on”. When the voltage is removed from the gate, the electron channel is blocked and the transistor “off”. The APT6030BN is a depletion-mode MOSFET which means that the drain-source current flows when the gate is not connected to the source. This configuration allows the FET to be used in high-side switching configurations.
The APT6030BN can be used in a variety of power electronics applications including, but not limited to, switching regulators, DC-DC converters, DC-AC inverters, audio amplifiers, and motor control. This FET offers excellent electrical performance in its class and is designed for easy integration and low-power switching applications. Additionally, the APT6030BN is highly robust and reliable, making it an ideal choice for a wide range of industrial and commercial applications.
Overall, the APT6030BN is an ideal choice for low-power switching applications. Its low gate-source capacitance and low on-resistance make it suitable for power electronics applications, and its high-frequency switching capability enables it to be used for a variety of applications. The APT6030BN’s reliable performance and robust design make it an excellent choice for a wide range of industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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