APT80GA60B

Power - Max:	625W
Supplier Device Package:	TO-247 [B]
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	400V, 47A, 4.7 Ohm, 15V
Td (on/off) @ 25°C:	23ns/158ns
Gate Charge:	230nC
Input Type:	Standard
Switching Energy:	840µJ (on), 751µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 47A
Current - Collector Pulsed (Icm):	240A
Current - Collector (Ic) (Max):	143A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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APT80GA60B Application field and Working Principle

APT80GA60B is an insulated-gate bipolar transistor (IGBT) that is primarily used in power electronics applications. It is a high power switching device that can be used to regulate and control the power flow from a power source to an electrical load. The versatile power switch device has a variety of potential applications ranging from DC–DC converters for renewable energy applications to motor drive and lighting devices.The APT80GA60B IGBT is based on the principle of a metal-oxide-semiconductor (MOS) field-effect transistor (FET). It combines the fast swtiching capabilities of a MOSFET with the bipolar linear capabilities of a bipolar junction transistor (BJT). This integrated structure provides an IGBT with a low gate charge, low gate-to-drain capacitance, low sub-threshold leakage current, and higher collector current than a BJT.The APT80GA60B is designed to provide exceptionally low device loss under high temperature operating conditions. The total device loss is equal to the on-state loss (or conduction losses), E-OFF loss, switching losses, and gate drive loss. The IGBT features superior high temperature capabilities, with lower on-state conduction losses at high temperatures compared to traditional BJT technologies. This reduces the total power dissipation and improves the overall efficiency.The APT80GA60B is available in a module package with a gate driver circuit built-in. The gate driver circuit is optimized to provide fast and reliable switching performance. High speed switching applications such as resonant and advanced topology AC–DC converters, as well as phase leg drive converters, are well suited for the APT80GA60B.The APT80GA60B is suitable for use in a variety of power electronics applications such as inverters, motor drives, switching power supplies, and lighting systems. Additionally, it can be used in distributed energy resources (DERs), traction motor drives, Uninterruptible Power Supplies (UPSs), variable frequency drives (VFDs), and power factor correction applications.The principle of operation of the APT80GA60B IGBT relies on the application of a small gate voltage to its gate terminal, causing an electric field that attracts electrons from the gate metal plate to the semiconductor body. These electrons form a conducting channel between the collector and emitter, thus allowing a current to flow through the device. The current is controlled by the amount of gate voltage applied, allowing the device to operate in either a fully open or fully closed state.In summary, the APT80GA60B is an insulated-gate bipolar transistor (IGBT) that combines the fast swtiching capabilities of a metal-oxide-semiconductor (MOS) field-effect transistor (FET) with the bipolar linear capabilities of a bipolar junction transistor (BJT). It is designed to provide low device loss at high temperature operating conditions and can be used in a diverse range of power electronics applications.

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