
Allicdata Part #: | APT84F50B2-ND |
Manufacturer Part#: |
APT84F50B2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 500V 84A TO-247 |
More Detail: | N-Channel 500V 84A (Tc) 1135W (Tc) Through Hole T-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | TO-247-3 Variant |
Supplier Device Package: | T-MAX™ [B2] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1135W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 340nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 42A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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APT84F50B2 is a P-channel enhancement mode vertical power field effect transistor (FET). It is a type of transistor that uses an electric field to control the flow of current, specifically in the form of a channel created in the semiconductor material. This type of transistor works in a similar way to that of a bipolar junction transistor (BJT), but with the addition of a voltage gate terminal, allowing a higher degree of control over the current flowing through it. The APT84F50B2 transistor has a breakdown voltage of 84 volts, and is capable of handling currents up to 38.4 amperes.
The most common application for the APT84F50B2 is as a switch and driver in power applications. It is widely used in DC motor drivers, linear actuators, and switching power supplies. It can also be used as an amplifier in audio applications, since it has very low distortion. With its robust design, it is well suited for use in higher power environments.
The working principle of the APT84F50B2 is based on what is known as the Lambert-Vieta theorem. This states that the electric field strength at the gate terminal of a FET is proportional to the power applied to the gate. This means that when a voltage is applied to the gate terminal, a corresponding electric field is created across the channel of the device. This electric field then controls the flow of current through the device, and can be adjusted by the amount of power applied to the gate terminal.
The APT84F50B2 is an ideal choice for many applications, since it is capable of delivering high current levels, while allowing precise control over the current flow. With its low operating temperature and wide input voltage range, the APT84F50B2 is also extremely reliable and long lasting. It is an ideal choice for a wide range of applications, from low voltage to high voltage.
The specific data is subject to PDF, and the above content is for reference
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