APT80F60J Allicdata Electronics
Allicdata Part #:

APT80F60J-ND

Manufacturer Part#:

APT80F60J

Price: $ 41.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 600V 84A SOT-227
More Detail: N-Channel 600V 84A (Tc) 961W (Tc) Chassis Mount IS...
DataSheet: APT80F60J datasheetAPT80F60J Datasheet/PDF
Quantity: 1000
10 +: $ 37.54800
Stock 1000Can Ship Immediately
$ 41.3
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 961W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 23994pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 598nC @ 10V
Series: POWER MOS 8™
Rds On (Max) @ Id, Vgs: 55 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT80F60J is a 60 Volt, 80 A, N-Channel power MOSFET from Apex Technology. It features advanced silicon technology, high avalanche energy capability, low on-resistance, fast switching speed, and extremely low gate charge, making it suitable for a variety of applications. This document will discuss the application fields and working principle of the APT80F60J.

Application Fields

The APT80F60J power MOSFET can be used in many different applications. It is ideal for switching and motor control applications due to its low on-resistance and fast switching speed. It is also suitable for applications which require high-efficiency, such as green energy systems. Additionally, the APT80F60J can be used in data communications, portable electronics, and notebook computer power management systems.

Working Principle

The APT80F60J is a metal-oxide semiconductor field-effect transistor (MOSFET). It consists of a source, a drain, and a gate separated by a substrate. A MOSFET works by allowing or preventing the flow of current in a circuit using an electric field. The voltage applied to the gate is used to control the amount of current passing through the source and drain terminals. When a positive voltage is applied to the gate, current can flow, but when the gate is at zero voltage, current flow will be blocked, preventing current from flowing through the circuit.

Furthermore, the APT80F60J utilizes a vertical structure, which increases its ability to withstand higher avalanche energy levels and enables it to be used in applications that require high-power ratings. The vertical structure of the APT80F60J decreases its on-resistance compared to conventional planar MOSFETs, resulting in improved efficiency and more power output.

Conclusion

The APT80F60J is a highly efficient and reliable N-Channel power MOSFET. Its low on-resistance, high avalanche energy capability, fast switching speed, and extremely low gate charge make it idea for a variety of applications, such as motor control, green energy systems, data communications, and power management systems. Its vertical structure also provides increased efficiency and more power output than other planar MOSFETs.

The specific data is subject to PDF, and the above content is for reference

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